Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

2010 ◽  
Vol 77 (5) ◽  
pp. 668-674 ◽  
Author(s):  
A. V. Karotki ◽  
A. V. Mudryi ◽  
M. V. Yakushev ◽  
F. Luckert ◽  
R. Martin
2006 ◽  
Vol 38 (2) ◽  
pp. 169-175 ◽  
Author(s):  
M. Scepanovic ◽  
T. Sreckovic ◽  
K. Vojisavljevic ◽  
M.M. Ristic

Mechanical activation was used as a method for modification of the structural and optical properties of commercial ZnO powder. For this purpose zinc oxide powder was mechanically treated by grinding in a high-energy vibro-mill in a continual regime in air up to 300 minutes. Starting and modified ZnO samples were characterized using XRD, BET and TEM measurements. Optical properties of these samples were investigated by Raman and photoluminescence (PL) spectroscopy. The color of commercial ZnO powder was white while mechanically activated ZnO powder was dark yellow, indicating the presence of nonstoichiometry. In the Raman spectra of non-activated sample Raman modes of bulk ZnO were observed, while the spectra of modified samples point out structural and stoichiometric changes. The PL spectra of modified samples excited by 325 and 442 nm lines of a He-Cd laser show great difference with respect to the spectra of the original sample. This study confirms that change in the defect structure of the ZnO crystal lattice introduced by mechanical activation affects the optical properties of this material.


2005 ◽  
Vol 295-296 ◽  
pp. 45-50 ◽  
Author(s):  
A.V. Vasev ◽  
S.I. Chikichev

Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating As-cap-layer with and without As4 beam applied to the surface. For a number metastable reconstruction transitions, a clear correlation is established between diffraction and optical data. Boundary lines for transitional superstructures are determined as a function of As flux and corresponding activation energies are estimated. For the first time it is ellipsometrically shown that optical response of the surface is drastically different for transitions of the order-order and order-disorder type.


2013 ◽  
Vol 341 ◽  
pp. 69-105
Author(s):  
R.C. Ramola ◽  
Subhash Chandra

High energy ion beam induced modifications in polymeric materials is of great interest from the point of view of characterization and development of various structures and filters. Due to potential use of conducting polymers in light weight rechargeable batteries, magnetic storage media, optical computers, molecular electronics, biological and thermal sensors, the impact of swift heavy ions for the changes in electrical, structural and optical properties of polymers is desirable. The high energy ion beam irradiation of polymer is a sensitive technique to enhance its electrical conductivity, structural, mechanical and optical properties. Recent progress in the radiation effects of ion beams on conducting polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on conductive polymers is described. The electrical, structural and optical properties of irradiated films were analyzed using V-I, X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible spectroscopy and Fourier transform infrared spectroscopy methods.


Author(s):  
В.А. Зиновьев ◽  
А.В. Кацюба ◽  
В.А. Володин ◽  
А.Ф. Зиновьева ◽  
С.Г. Черкова ◽  
...  

In this work, we study the growth features, as well as the structural and optical properties of CaSi2 layers formed in the process of successive deposition of Si and CaF2 on a Si (111) substrate with simultaneous irradiation with high energy electron beam. The Raman spectra recorded in the regions of the electron beam action showed peaks characteristic of crystalline CaSi2 layers. The study of the surface morphology of the grown structures demonstrated that, under the chosen synthesis conditions, the formation of CaSi2 layers during electron irradiation occurs according to a two-dimensional layer mechanism. The photoluminescence spectra measured in the region modified by the electron beam have significant differences from the spectra measured outside this region.


2018 ◽  
Vol 173 (1-2) ◽  
pp. 128-137 ◽  
Author(s):  
T. Santhosh Kumar ◽  
Arun Vinod ◽  
Mahendra Singh Rathore ◽  
A. P. Pathak ◽  
Fouran Singh ◽  
...  

2012 ◽  
Vol 36 (1) ◽  
pp. 43-51 ◽  
Author(s):  
T.B. Ivetić ◽  
M.R. Dimitrievska ◽  
I.O. Gúth ◽  
Lj.R. Đačanin ◽  
S.R. Lukić-Petrović

Abstract Zinc oxide nanoparticles doped with europium were obtained by high energy ball milling followed by heat treatment and combustion reaction synthesis method starting from its microcrystalline powders. The influence of the preparation method approach and europium doping on the structural and optical properties of ZnO powders was investigated by X-ray diffraction, Raman and diffuse reflectance spectroscopy


2005 ◽  
Vol 864 ◽  
Author(s):  
S.X. Li ◽  
K.M. Yu ◽  
R.E. Jones ◽  
J. Wu ◽  
W. Walukiewicz ◽  
...  

AbstractWe have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He+ were used to produce displacement damage doses (Dd) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with Dd and finally saturate after a sufficiently high Dd. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (EFS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at EFS.


2017 ◽  
Vol 727 ◽  
pp. 581-587
Author(s):  
Qian Chen ◽  
Kan Chen ◽  
Qing Chen ◽  
Qing Quan Xiao ◽  
Quan Xie

A detailed theoretical study on the influence of lattice vacancy on structural and optical properties of the magnesium silicide Mg2Si has been performed based on the first-principles pseudopotential method. The results show that Mg2Si has changed from indirect band gap semiconductor to direct band gap semiconductor because of Mg vacancy. Compared with the dielectric function, absorption coefficient, refractive index, reflectivity and photon conductivity of Mg2Si, those peaks of Mg15Si8 appear from 0 to 1.8 eV. And the loss function’s biggest peak of Mg15Si8 moves to the direction of high energy.


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