Normally-Off 4H-SiC Power MOSFET with Submicron Gate

2008 ◽  
Vol 600-603 ◽  
pp. 1115-1118 ◽  
Author(s):  
Kenya Yamashita ◽  
Kyoko Egashira ◽  
Koichi Hashimoto ◽  
Kunimasa Takahashi ◽  
Osamu Kusumoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Electronics ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Channel Length ◽  
Power Mosfet ◽  
High Breakdown Voltage ◽  
Channel Layer

In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperature and 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at 200°C, respectively, while the breakdown voltage was greater than 1400V .

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

2006 ◽  
Vol 955 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Jiang Li ◽  
Nariaki Ikeda ◽  
Seikoh Yoshida
Keyword(s):  
Breakdown Voltage ◽  
Large Scale ◽  
Room Temperature ◽  
Drain Current ◽  
High Breakdown Voltage ◽  
Large Current ◽  
Drain Electrode ◽  
Current Operation ◽  
State Breakdown ◽  
State Resistance

ABSTRACTIt is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

2002 ◽  
Vol 23 (3) ◽  
pp. 142-144 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Wen-Tse Hsieh ◽  
Yong-Shiuan Tsair ◽  
Cheng-Nan Chang ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Heterojunction Diode ◽  
High Breakdown Voltage ◽  
Temperature Applications

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 1367-1370
Author(s):  
Lin Zhu ◽  
Peter A. Losee ◽  
T. Paul Chow ◽  
Kenneth A. Jones ◽  
Charles Scozzie ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Impact Ionization ◽  
Surface Damage ◽  
Ionization Rate ◽  
Ionization Coefficient ◽  
Temperature Activation ◽  
Impact Ionization Rate ◽  
Drift Layer

4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance
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