scholarly journals Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo–Si–N Coating during Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4325
Author(s):  
Aihua Jiang ◽  
Hongjuan Shao ◽  
Liwen Zhu ◽  
Songshan Ma ◽  
Jianrong Xiao

TiO2 possesses a wide forbidden band of about 3.2 eV, which severely limits its visible light absorption efficiency. In this work, copper nitride (Cu3N) films were prepared by magnetron sputtering at different gas flow ratios. The structure of the films was tested by scanning electron microscope, X-ray diffractometer, and X-ray photoelectron spectroscope. Optical properties were investigated by UV-vis spectrophotometer and fluorescence spectrometer. Results show that the Cu3N crystal possesses a typical anti-ReO3 crystal structure, and the ratio of nitrogen and Cu atoms of the Cu3N films was adjusted by changing the gas flow ratio. The Cu3N films possess an optical band gap of about 2.0 eV and energy gap of about 2.5 eV and exhibit excellent photocatalytic activity for degrading methyl orange (degradation ratio of 99.5% in 30 min). The photocatalytic activity of Cu3N mainly originates from vacancies in the crystal and Cu self-doping. This work provides a route to broaden the forbidden band width of photocatalytic materials and increase their photoresponse range.


1996 ◽  
Vol 452 ◽  
Author(s):  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Kouichirou Minami ◽  
Masaji Yamamoto ◽  
Jun-ichi Hanna

AbstractThe composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.


2018 ◽  
Vol 24 (4) ◽  
pp. 266 ◽  
Author(s):  
Doan Dinh Phuong ◽  
Van Duong Luong ◽  
Phan Ngoc Minh ◽  
Hyun Jun Park ◽  
Kyoung Il Moon

<p class="Abstract">In this present work, the TiAlVN coatings were deposited by magnetron sputtering using a single alloy target of Ti<sub>60</sub>Al<sub>30</sub>V<sub>10</sub>. The effect of the argon (Ar) to nitrogen (N<sub>2</sub>) gas flow ratio on the structure, morphological characteristics and mechanical properties of the TiAlVN coating were investigated. The results of X-ray diffraction show the coatings have only face-centred cubic (fcc) structures at different gas ratio of Ar:N<sub>2</sub>. FE-SEM observation analysis each of the TiAlVN coatings indicated that the change of the gas ratio affects the surface morphology. The nano-indentation results demonstrated that coatings deposited with the gas ratio of Ar:N<sub>2</sub> being 9:1 exhibited the highest hardness and elastic modulus. Moreover, with the various gas ratio of Ar:N<sub>2</sub>, ball-on-disc against SUJ2 ball in air at room temperature indicated friction coefficient from 0.43 to 0.58 in dry condition and 0.073 to 0.12 in oil condition, respectively, which is related to the surface roughness and grain sizes of the coatings.</p>


2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.


1992 ◽  
Vol 7 (4) ◽  
pp. 888-893 ◽  
Author(s):  
M. Sherif El-Eskandarany ◽  
K. Sumiyama ◽  
K. Aoki ◽  
K. Suzuki

Nonequilibrium titanium-nitride alloy powders have been fabricated by a high energetic ball mill under nitrogen gas flow at room temperature and characterized by means of x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and differential scanning calorimetry. Initial hcp titanium is completely transformed to nonequilibrium-fcc Ti–N after 720 ks of the milling time. The fcc Ti–N phase is stable at relatively low temperature and transforms at 855 K to Ti2N and δ phases. At the final stage of milling, the particle- and grain-sizes of alloy powders are 1 mm and 5 nm, respectively, and the lattice parameter is 0.419 nm.


Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 425 ◽  
Author(s):  
Song Zhang ◽  
Tingting Wang ◽  
Ziyu Zhang ◽  
Jun Li ◽  
Rong Tu ◽  
...  

Direct-current magnetron sputtering (DCMS) was applied to prepare vanadium (V) films on Si substrate. The influence of substrate temperature (Ts) and target–substrate distance (Dt–s) on phase structure and surface morphology of V films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM). The results show that the crystallinity of the V films increases with increasing Ts and decreasing Dt–s. The film deposited at Ts = 400 °C and Dt–s = 60 mm exhibits the best crystallinity and <111> preferred orientation with a regular tetrahedral surface morphology. Oxidation behavior of the V thin films has also been studied by X-ray photoelectron spectroscopy (XPS).


2014 ◽  
Vol 488-489 ◽  
pp. 9-13
Author(s):  
Guang Xian ◽  
Hai Bo Zhao ◽  
Hong Yuan Fan ◽  
Hao Du

ZrAlYN films were prepared by magnetron sputtering at various N2/Ar flow ratio. The structure, composition and thermal properties were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectrum. The results show that the deposited ZrAlN and ZrAlYN films possessed a single NaCl-type solid solution phase. The ZrAlN film was (200) strongly predominated. The (111) peak was prominently increased in ZrAlYN films and thus the preferred orientation changed to (111) and (200) co-predomination. The crystallinity of ZrAlYN films was gradually degraded with enhanced N2/Ar flow ratio. Both ZrAlN and ZrAlYN films were exhibited a featureless fracture microstructure. The thickness of ZrAlYN films was consistently reduced due to more nitride produced on the surface of targets at higher N2/Ar flow ratio. The ZrAlYN films deposited at 1:5 N2/Ar flow ratio was proved to be the best oxidation resistance under annealing at 1000°C for 2h in air. As N2/Ar flow ratio increased, the oxidation resistance of films was inversely deteriorated due to the decreased yttrium content in films.


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