Structural evolution of a Ta-filament during hot-wire chemical vapour deposition of Silicon investigated by electron backscatter diffraction

2011 ◽  
Vol 47 (5) ◽  
pp. 2405-2410 ◽  
Author(s):  
Clive J. Oliphant ◽  
Christopher J. Arendse ◽  
Sara N. Prins ◽  
Gerald F. Malgas ◽  
Dirk Knoesen
2015 ◽  
Vol 619 ◽  
pp. 406-410 ◽  
Author(s):  
Jianjun Chen ◽  
Mingming Wang ◽  
Xin Liao ◽  
Zhaoxiang Liu ◽  
Judong Zhang ◽  
...  

2007 ◽  
Vol 989 ◽  
Author(s):  
Hongbo Li ◽  
Ronald H.J. Franken ◽  
Robert L. Stolk ◽  
C. H.M. van der Werf ◽  
Jan-Willem A. Schuttauf ◽  
...  

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.


2000 ◽  
Vol 63 (3) ◽  
pp. 237-246 ◽  
Author(s):  
C Voz ◽  
D Peiró ◽  
M Fonrodona ◽  
D Soler ◽  
J Bertomeu ◽  
...  

2016 ◽  
Vol 72 (4) ◽  
pp. 269-272 ◽  
Author(s):  
T. Dominguez Bucio ◽  
A. Tarazona ◽  
A. Z. Khokhar ◽  
G. Z. Mashanovich ◽  
F. Y. Gardes

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