Interfacial reactions between pure Cu, Ni, and Ni–Cu alloys and p-type Bi2Te3 bulk thermoelectric material

Author(s):  
Masanori Tashiro ◽  
Sohei Sukenaga ◽  
Koichi Ikemoto ◽  
Kozo Shinoda ◽  
Tsuyoshi Kajitani ◽  
...  
JOM ◽  
2020 ◽  
Vol 72 (10) ◽  
pp. 3558-3566
Author(s):  
Chao-hong Wang ◽  
Mei-hau Li ◽  
Chun-wei Chiu ◽  
Xin-He Wang

2015 ◽  
Vol 46 (6) ◽  
pp. 2372-2375 ◽  
Author(s):  
Shan Ye ◽  
Jen-Dong Hwang ◽  
Chih-Ming Chen
Keyword(s):  

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen

2004 ◽  
Vol 19 (4) ◽  
pp. 1294-1294 ◽  
Author(s):  
Sihai Wen ◽  
D.D.L. Chung

In the two papers listed above, the conversion of the Seebeck coefficient (relative to copper) to the absolute thermoelectric power was done by using the wrong sign of the absolute thermoelectric power of copper (2.34 μV/°C). The corrected tables are shown below for both papers. The correction means that plain cement paste is slightly p-type rather than slightly n-type. In addition, it means that cement pastes with carbon fibers are more p-type and those with steel fibers are less n-type than reported. Note in Table III of Paper 2 that all cement pastes are p-type except for paste (ii). Note in Table IV of Paper 2 that all cement junctions are pn-junctions (rather than some being nn+-junctions).


Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18116-18123 ◽  
Author(s):  
David Kipkemoi Sang ◽  
Teng Ding ◽  
Meng Nan Wu ◽  
Yu Li ◽  
Junqin Li ◽  
...  

Side and top views of monolayer 2D-β-Tellurene with difference charge densities (DCD).


2016 ◽  
Vol 18 (8) ◽  
pp. 5925-5931 ◽  
Author(s):  
Gang Zhou ◽  
Dong Wang

p-Type CuInTe2 is predicted to be a promising thermoelectric material at medium temperatures by optimization of doping at the In-site.


1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.


Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7150
Author(s):  
Hongming Li ◽  
Shuang Zhang ◽  
Yajun Zhao ◽  
Xiaona Li ◽  
Fushi Jiang ◽  
...  

Reaching simultaneously high mechanical strength and low electrical resistivity is difficult as both properties are based on similar microstructural mechanisms. In our previous work, a new parameter, the tensile strength-over-electrical resistivity ratio, is proposed to evaluate the matching of the two properties in Cu alloys. A specific ratio of 310 × 108 MPa·Ω−1·m−1, independent of the alloy system and thermal history, is obtained from Cu-Ni-Mo alloys, which actually points to the lower limit of prevailing Cu alloys possessing high strength and low resistivity. The present paper explores the origin of this specific ratio by introducing the dual-phase mechanical model of composite materials, assuming that the precipitate particles are mechanically mixed in the Cu solid solution matrix. The strength and resistivity of an alloy are respectively in series and parallel connections to those of the matrix and the precipitate. After ideally matching the contributions from the matrix and the precipitate, the alloy should at least reach half of the resistivity of pure Cu, i.e., 50%IACS, which is the lower limit for industrially accepted highly conductive Cu alloys. Under this condition, the specific 310 ratio is related to the precipitate-over-matrix ratios for strength and resistivity, which are both two times those of pure Cu.


2018 ◽  
Vol 6 (20) ◽  
pp. 9642-9649 ◽  
Author(s):  
D. Li ◽  
J. M. Li ◽  
J. C. Li ◽  
Y. S. Wang ◽  
J. Zhang ◽  
...  

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance.


Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19923-19932 ◽  
Author(s):  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Junrong Zhang ◽  
Ping Zhang ◽  
Wu-Xing Zhou ◽  
...  

Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields.


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