scholarly journals Preparation of Textured Surfaces on Aluminum-Alloy Substrates

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 109 ◽  
Author(s):  
Markéta Kadlečková ◽  
Antonín Minařík ◽  
Petr Smolka ◽  
Aleš Mráček ◽  
Erik Wrzecionko ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Tensile Testing ◽  
Chemical Etching ◽  
Etching Time ◽  
Textured Surface ◽  
Initial Surface ◽  
Textured Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Time Period

The ways of producing porous-like textured surfaces with chemical etching on aluminum-alloy substrates were studied. The most appropriate etchants, their combination, temperature, and etching time period were explored. The influence of a specifically textured surface on adhesive joints’ strength or superhydrophobic properties was evaluated. The samples were examined with scanning electron microscopy, profilometry, atomic force microscopy, goniometry, and tensile testing. It was found that, with the multistep etching process, the substrate can be effectively modified and textured to the same morphology, regardless of the initial surface roughness. By selecting proper etchants and their sequence one can prepare new types of highly adhesive or even superhydrophobic surfaces.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

scholarly journals The Effects of Chemical Etching and Ultra-Fine Grain Structure of Titanium on MG-63 Cells Response

Metals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 510
Author(s):  
Denis Nazarov ◽  
Elena Zemtsova ◽  
Vladimir Smirnov ◽  
Ilya Mitrofanov ◽  
Maxim Maximov ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Etching ◽  
Grain Structure ◽  
Coarse Grained ◽  
Etching Time ◽  
Force Microscopy ◽  
Flight Mass Spectrometry ◽  
Fine Grain ◽  
Atomic Force ◽  
Ultrafine Grained

In this work, we study the influence of the surface properties of ultrafine grained (UFG) and coarse grained (CG) titanium on the morphology, viability, proliferation and differentiation of osteoblast-like MG-63 cells. Wet chemical etching in H2SO4/H2O2 and NH4OH/H2O2 solutions was used for producing surfaces with varying morphology, topography, composition and wettability. The topography and morphology have been studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The composition was determined by time of flight mass-spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS). The results showed that it is possible to obtain samples with different compositions, hydrophilicity, topography and nanoscale or/and microscale structures by changing the etching time and the type of etching solution. It was found that developed topography and morphology can improve spreading and proliferation rate of MG-63 cells. A significant advantage of the samples of the UFG series in comparison with CG in adhesion, proliferation at later stages of cultivation (7 days), higher alkaline phosphatase (ALP) activity and faster achievement of its maximum values was found. However, there is no clear benefit of the UFG series on osteopontin (OPN) expression. All studied samples showed no cytotoxicity towards MG-63 cells and promoted their osteogenic differentiation.

EFFECT OF ETCHING TIME ON OPTICAL AND MORPHOLOGICAL FEATURES OF N-TYPE POROUS SILICON PREPARED BY PHOTO-ELECTROCHEMICAL METHOD

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Asad A. Thahe ◽  
Noriah Bidin ◽  
Mohammed A. Al-Azawi ◽  
Naser M. Ahmed
Keyword(s):  
Porous Silicon ◽  
Gravimetric Method ◽  
Constant Current ◽  
Etching Time ◽  
Absorption Data ◽  
Time Duration ◽  
Constant Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structure Properties

Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.  

Self-affine Fracture Surface Parameters and Their Relationship with Microstructure in a Cast Aluminum Alloy

2002 ◽  
Vol 17 (6) ◽  
pp. 1276-1282 ◽  
Author(s):  
M. Hinojosa ◽  
J. Aldaco
Keyword(s):  
Aluminum Alloy ◽  
Fracture Surface ◽  
The Self ◽  
Cast Aluminum Alloy ◽  
Cast Aluminum ◽  
Force Microscopy ◽  
Fracture Surfaces ◽  
Atomic Force ◽  
Roughness Exponent

The possible role of microstructural features in determining the self-affinity of the fracture surface of a cast aluminum alloy is explored in this work. Fracture surfaces generated both in tension and impact tests were topometrically analyzed by atomic force microscopy, scanning electron microscopy, and stylus profilometry. The roughness exponent exhibited the “universal” value ζ ≈ 0.78, and the correlation length ζ was of the order of the grain size. The brittle intermetallic compounds known to be important in crack initiation did not show any correlation with the self-affine parameters of the resulting fracture surfaces in this particular case.

Surface Structuring of α/β-Sialon Ceramics by Plasma-Etching

2008 ◽  
Vol 403 ◽  
pp. 99-102
Author(s):  
Marco Riva ◽  
Rainer Oberacker ◽  
Michael J. Hoffmann ◽  
Carlos Ziebert
Keyword(s):  
Plasma Etching ◽  
Glassy Phase ◽  
Etching Rate ◽  
Etching Time ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Complementary Techniques ◽  
Reactive Gas

Effects of plasma etching on mixed /-sialon ceramics with different /-ratiowere investigated. A mix of CF4/O2 in a ratio of 2:1 was chosen as reactive gas. Parameters such as etching time and the material composition were examined. It was shown that -grains exhibit a larger etching rate than the grain boundary glassy phase or the -grains, generating pockets in a range of few µm. The so created surfaces were characterized both by scanning electron microscopy (SEM) and by atomic force microscopy (AFM) in contact mode. These complementary techniques also enabled the determination of the bearing ratio.

INFLUENCE OF SUBSTRATE TOPOGRAPHY ON THE NUCLEATION AND GROWTH OF 321 STAINLESS STEEL THIN FILMS PRODUCED BY MAGNETRON SPUTTERING

2008 ◽  
Vol 15 (04) ◽  
pp. 411-418 ◽  
Author(s):  
YONGZHONG JIN ◽  
DONGLIANG LIU ◽  
WEI WU ◽  
YALI SUN ◽  
ZUXIAO YU ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Magnetron Sputtering ◽  
Active Sites ◽  
Nucleation And Growth ◽  
Textured Surfaces ◽  
Force Microscopy ◽  
Substrate Topography ◽  
Atomic Force ◽  
Nucleation Sites ◽  
Influence Of Substrate

We have investigated the effects of substrate topography on the nucleation and growth behavior of 321 stainless steel (ss) films, introducing textured surfaces into mica substrates by the abrasion treatment. In this study, two groups of samples were prepared at three different sputtering time within 12 s using radio frequency (r.f.) magnetron sputtering and characterized by atomic force microscopy. Good nucleation uniformity has been obtained on the unabraded mica substrates due to the statistical distribution of nucleation sites. Especially, we have already observed an interesting unusual nucleation phenomenon, the island–rim structure on the abraded mica substrates after 4 s, where the island is fractal-like and the rim around the island was only occupied by few grains for nucleation. These ramified islands were located at the wide grooves introduced as predominate nucleation sites. The island–rim structure formed in initial nucleation process is closely associated with x, y velocity components of surface atoms and the distribution of active sites (related intimately to the surface free energy σ and strain energy ε) for nucleation. With the increasing of the sputtering time, voids and overlarge grains have been observed in the island–rim region after the sputtering time of 8 s and 12 s, respectively.

Atomic force microscopy of histological sections using a chemical etching method

2005 ◽  
Vol 102 (3) ◽  
pp. 227-232 ◽  
Author(s):  
B. Tiribilli ◽  
D. Bani ◽  
F. Quercioli ◽  
A. Ghirelli ◽  
M. Vassalli
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Etching ◽  
Force Microscopy ◽  
Histological Sections ◽  
Atomic Force ◽  
Etching Method

AFM investigations of chemical-mechanical processes on silicon(100) surfaces

2007 ◽  
Vol 991 ◽  
Author(s):  
Ruiji Iomoto ◽  
Forrest Stevens ◽  
Steven Langford ◽  
Tom Dickinson
Keyword(s):  
Atomic Force Microscopy ◽  
Oxide Layer ◽  
Chemical Etching ◽  
Etching Process ◽  
Basic Solution ◽  
Additional Material ◽  
Etching Solution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemical Effects

ABSTRACTAtomic force microscopy (AFM) was used to examine chemical-mechanical processes on Si (100) surfaces. Places where the underlying silicon was exposed etched in basic solution, producing structures 100 nm or less in size. Etching occurs only in the presence of combined mechanical and chemical effects. By performing AFM in basic solution, the entire etching process could be observed directly. High-force scans were used to remove oxide and initiate etching in selected locations, followed by low-force scans which imaged the etching process. Although roughness initially increased during etching, the final surfaces were smooth. The etching was measured for different applied loads, numbers of scans, concentrations of the etching solution, and time. The oxide layer was extremely sensitive to applied stress, and even very light scanning caused the oxide layer to dissolve more rapidly. Once the oxide layer was removed, chemical etching proceeded with or without AFM scanning, but if AFM scanning was continued additional material was removed, probably by a tribochemical mechanism on pure Si.

Twin structure in Yb:YAl3(BO3)4crystal

2001 ◽  
Vol 34 (5) ◽  
pp. 661-662 ◽  
Author(s):  
Shanrong Zhao ◽  
Jiyang Wang ◽  
Daliang Sun ◽  
Xiaobo Hu ◽  
Hong Liu
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Chemical Etching ◽  
Laser Crystal ◽  
Frequency Doubling ◽  
Twin Plane ◽  
The Self ◽  
Twin Structure ◽  
Force Microscopy ◽  
Atomic Force

Twin structure is a defect in the self-frequency-doubling laser crystal material Yb:YAl3(BO3)4(YbYAB). Based on atomic force microscopy (AFM) observations, a check-like twin structure in YbYAB crystals is found. This kind of twin structure has three twin composition planes: (10\bar{1}1), (0\bar{1}11) and (\bar{1}101). These three twin composition planes result in a series of twin boundaries in two directions, forming a check-like pattern on each face. From the orientation of the chemical etching pits on each side of the twin boundary, it is found that the twin element is `twin plane ⊥yaxis', alternatively indicated as `twin plane {11\bar{2}0}'. The two single crystals composing the twin are a right form and a left form. This kind of twin is similar to the Brazil twin found in quartz.

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