Applicability of Reddish-Orange Light Emitting Samarium (III) Complexes for Biomedical and Multifunctional Optoelectronic Devices

Author(s):  
Pooja Hooda ◽  
V. B. Taxak ◽  
R. K. Malik ◽  
Savita Khatri ◽  
Poonam Kumari ◽  
...  
Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 405
Author(s):  
Daocheng Hong ◽  
Mingyi Xie ◽  
Yuxi Tian

Solution-processed organometal halide perovskites (OMHPs) have been widely used in optoelectronic devices, and have exhibited brilliant performance. One of their generally recognized advantages is their easy fabrication procedure. However, such a procedure also brings uncertainty about the opto-electric properties of the final samples and devices, including morphology, stability, coverage ratio, and defect concentration. Normally, one needs to find a balanced condition, because there is a competitive relation between these parameters. In this work, we fabricated CH3NH3PbI3 films by carefully changing the ratio of the PbI2 to CH3NH3I, and found that the stoichiometric and solvent engineering not only determined the photoluminescence efficiency and defects in the materials, but also affected the photostability, morphology, and coverage ratio. Combining solvent engineering and the substitution of PbI2 by Pb(Ac)2, we obtained an optimized fabrication condition, providing uniform CH3NH3PbI3 films with both high photoluminescence efficiency and high photostability under either I-rich or Pb-rich conditions. These results provide an optimized fabrication procedure for CH3NH3PbI3 and other OMHP films, which is crucial for the performance of perovskite-based solar cells and light emitting devices.


Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Seunghyun Rhee ◽  
Kunsik An ◽  
Kyung-Tae Kang

Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.


2010 ◽  
Vol 173 ◽  
pp. 1-6 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee

In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.


2014 ◽  
Vol 153 ◽  
pp. 198-202 ◽  
Author(s):  
E. Álvarez ◽  
Ma. E. Zayas ◽  
J. Alvarado-Rivera ◽  
F. Félix-Domínguez ◽  
R.P. Duarte-Zamorano ◽  
...  

Author(s):  
Lyuchao Zhuang ◽  
Lingling Zhai ◽  
Yanyong Li ◽  
Ren Hui ◽  
Mingjie Li ◽  
...  

Metal halide perovskites are emerging materials for next-generation optoelectronic devices, of which all-inorganic CsPbBr3 perovskite has attracted increasing attention due to outstanding stability and excellent photoelectric characteristics compared with organic-inorganic...


2019 ◽  
Vol 232 ◽  
pp. 39-48 ◽  
Author(s):  
Anju Hooda ◽  
S.P. Khatkar ◽  
Avni Khatkar ◽  
R.K. Malik ◽  
Jyoti Dalal ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.


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