Large lattice mismatch induced perpendicular magnetic anisotropy and perpendicular exchange bias in CoPt/FeMn bilayer films

2019 ◽  
Vol 62 (11) ◽  
pp. 2009-2013
Author(s):  
ChunJiao Pan ◽  
TengHua Gao ◽  
Nobuhide Itogawa ◽  
Takashi Harumoto ◽  
ZhengJun Zhang ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Exchange Bias ◽  
Lattice Mismatch ◽  
Perpendicular Magnetic Anisotropy ◽  
Bilayer Films ◽  
Large Lattice ◽  
Large Lattice Mismatch

Structures of Silver/Cobalt Metallic Superlattice and Changes Due to Annealing

1990 ◽  
Vol 187 ◽  
Author(s):  
T. Kingetsu ◽  
K. Sakai ◽  
T. Kaneko ◽  
A. Yamaguchi ◽  
R. Yamamoto
Keyword(s):  
Magnetic Anisotropy ◽  
Growth Temperature ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Ex Situ ◽  
Superlattice Structure ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Fcc Structure

AbstractAg/Co metallic superlattices were grown onto Ag buffer layers pre-deposited on sapphire or MgO substrates by ultrahigh vacuum alternate deposition technique. In-situ RHEED observations during superlattice growth and ex-situ XRD measurements revealed that structures of the superlattices were strongly affected by the condition of Ag buffer layer preparation. In case where the Ag buffer layers were single crystals with smooth (111) surfaces, Co layers were epitaxially grown on the buffer layers even in the presence of large lattice mismatch, and whole the superlattices were grown with an epitaxial relation. Interface smoothness was strongly related to the growth temperature. Spotty RHEED patterns of Co layers for a low growth temperature indicated that the Co layers had an FCC structure. Post-annealing of the samples, in some cases, destroyed a superlattice structure completely. From relations between magnetic anisotropy and Co-layer thickness obtained with VSM measurements, it was found that Ag/Co superlattice exhibited in-plane magnetic anisotropy down to a Co thickness of 4A and that the anisotropy was correlated with roughness of the interfaces.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

Sign in / Sign up

Export Citation Format

Share Document