scholarly journals Microstructural Characterization of a Polycrystalline Nickel-Based Superalloy Processed via Tungsten-Intert-Gas-Shaped Metal Deposition

2010 ◽  
Vol 41 (6) ◽  
pp. 1346-1353 ◽  
Author(s):  
Daniel Clark ◽  
Martin R. Bache ◽  
Mark T. Whittaker
Keyword(s):  
Microstructural Characterization ◽  
Metal Deposition ◽  
Polycrystalline Nickel ◽  
Nickel Based Superalloy ◽  
Shaped Metal Deposition

Microstructural Characterization of the White Etching Layer in Nickel-Based Superalloy

2011 ◽  
Vol 42 (12) ◽  
pp. 3813-3825 ◽  
Author(s):  
A. M. Wusatowska-Sarnek ◽  
B. Dubiel ◽  
A. Czyrska-Filemonowicz ◽  
P. R. Bhowal ◽  
N. Ben Salah ◽  
...  
Keyword(s):  
Microstructural Characterization ◽  
Nickel Based Superalloy

scholarly journals Ultrasonic Characterization of Components Manufactured by Direct Laser Metal Deposition

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2658
Author(s):  
Anna Castellano ◽  
Marco Mazzarisi ◽  
Sabina Luisa Campanelli ◽  
Andrea Angelastro ◽  
Aguinaldo Fraddosio ◽  
...  
Keyword(s):  
Microstructural Analysis ◽  
Deposition Process ◽  
Metal Deposition ◽  
Laser Metal Deposition ◽  
Nickel Based Superalloy ◽  
Ultrasonic Characterization ◽  
Direct Laser ◽  
New Material ◽  
Direct Laser Metal Deposition

Direct laser metal deposition (DLMD) is an innovative additive technology becoming of key importance in the field of repairing applications for industrial and aeronautical components. The performance of the repaired components is highly related to the intrinsic presence of defects, such as cracks, porosity, excess of dilution or debonding between clad and substrate. Usually, the quality of depositions is evaluated through destructive tests and microstructural analysis. Clearly, such methodologies are inapplicable in-process or on repaired components. The proposed work aims to evaluate the capability of ultrasonic techniques to perform the mechanical characterization of additive manufactured (AM) components. The tested specimens were manufactured by DLMD using a nickel-based superalloy deposited on an AISI 304 substrate. Ultrasonic goniometric immersion tests were performed in order to mechanical characterize the substrate and the new material obtained by AM process, consisting of the substrate and the deposition. Furthermore, the relationship was evaluated between the acoustic and the mechanical properties of the AM components and the deposition process parameters and the geometrical characteristics of multiclad depositions, respectively. Finally, the effectiveness of the proposed non-destructive experimental approach for the characterization of the created deposition anomalies has been investigated.

Three-dimensional imaging and characterization of the oxide scale formed on a polycrystalline nickel-based superalloy

2019 ◽  
Vol 167 ◽  
pp. 16-20 ◽  
Author(s):  
Sebastian Lech ◽  
Adam Kruk ◽  
Aleksander Gil ◽  
Grzegorz Cempura ◽  
Alina Agüero ◽  
...  
Keyword(s):  
Oxide Scale ◽  
Three Dimensional ◽  
Polycrystalline Nickel ◽  
Three Dimensional Imaging ◽  
Nickel Based Superalloy

MICROSTRUCTURAL CHARACTERIZATION OF A Ru--CONTAINING SINGLE CRYSTAL NICKEL--BASED SUPERALLOY

2013 ◽  
Vol 48 (5) ◽  
pp. 569-574 ◽  
Author(s):  
Xipeng TAN ◽  
Jinlai LIU ◽  
Xiaoping SONG ◽  
Tao JIN ◽  
Xiaofeng SUN ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microstructural Characterization ◽  
Nickel Based Superalloy

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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