Influence of Quantum Capacitance on Charge Carrier Density Estimation in a Nanoscale Field-Effect Transistor with a Channel Based on a Monolayer WSe2 Two-Dimensional Crystal Semiconductor

2019 ◽  
Vol 48 (6) ◽  
pp. 3504-3513 ◽  
Author(s):  
M. K. Bera ◽  
R. Kharb ◽  
N. Sharma ◽  
A. K. Sharma ◽  
R. Sehrawat ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Density Estimation ◽  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantum Capacitance ◽  
Charge Carrier Density ◽  
Two Dimensional ◽  
Effect Transistor ◽  
Dimensional Crystal

scholarly journals HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 446
Author(s):  
Minghui Zhang ◽  
Fang Lin ◽  
Wei Wang ◽  
Feng Wen ◽  
Genqiang Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Source Current ◽  
Effect Transistor ◽  
Source Current Density

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlOx/Al2O3 bilayer dielectrics is fabricated and characterized. The HfAlOx/Al2O3 bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (VTH) is 8.3 V. The maximum drain source current density (IDSmax), transconductance (Gm), capacitance (COX) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 μF/cm2 and 1.53 × 1013 cm−2, respectively.

scholarly journals Two-Dimensional-Material-Based Field-Effect Transistor Biosensor for Detecting COVID-19 Virus (SARS-CoV-2)

ACS Nano ◽  
2021 ◽  
Author(s):  
Parvin Fathi-Hafshejani ◽  
Nurul Azam ◽  
Lu Wang ◽  
Marcelo A. Kuroda ◽  
Michael C. Hamilton ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

Two dimensional analytical model for a reconfigurable field effect transistor

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

scholarly journals Electrical conductivity in a non-covalent two-dimensional porous organic material with high crystallinity

2021 ◽  
Author(s):  
Qizhi Xu ◽  
Boyuan Zhang ◽  
Yihang Zeng ◽  
Amirali Zangiabadi ◽  
Hongwei Ni ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Organic Material ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Van Der Waals Interactions ◽  
Two Dimensional ◽  
Porous Films ◽  
Top Down ◽  
High Crystallinity ◽  
Effect Transistor

Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.

Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3

2020 ◽  
Vol 12 ◽  
pp. 100174 ◽  
Author(s):  
Ranjit A. Patil ◽  
Hao-Wei Tu ◽  
Ming-Hsing Jen ◽  
Jing-Jia Lin ◽  
Ching-Cherng Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor
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