Effect of Sn Film Grain Size and Thickness on Kinetics of Spontaneous Sn Whisker Growth

JOM ◽  
2019 ◽  
Vol 71 (9) ◽  
pp. 3041-3048 ◽  
Author(s):  
Wen-Chih Lin ◽  
Tsan-Hsien Tseng ◽  
Wei Liu ◽  
Kuo-Shuo Huang ◽  
Hao Chen ◽  
...  
Keyword(s):  
Grain Size ◽  
Whisker Growth ◽  
Sn Whisker ◽  
Kinetics Of

scholarly journals Kinetics of Sn whisker growth from Sn thin-films on Cu substrate

2020 ◽  
Vol 31 (19) ◽  
pp. 16314-16323 ◽  
Author(s):  
Balázs Illés ◽  
Olivér Krammer ◽  
Tamás Hurtony ◽  
Karel Dušek ◽  
David Bušek ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rates ◽  
Whisker Growth ◽  
Layer Structure ◽  
Intermetallic Layer ◽  
Layer Growth ◽  
Sn Whisker ◽  
Cu Substrate ◽  
Sn Whiskers ◽  
Kinetics Of

Abstract The kinetics of Sn whisker growth was investigated on vacuum-evaporated Sn thin-films. Sn film layers were deposited on a Cu substrate with 0.5 and 1 µm thicknesses. The samples were stored in room conditions (22 ± 1 °C/50 ± 5RH%) for 60 days. The Sn whiskers and the Cu–Sn layer structure underneath them were investigated with both scanning electron and ion microscopy. Fast Cu–Sn intermetallic formation resulted in considerable mechanical stress in the Sn layer, which initiated intensive whisker growth right after the layer deposition. The thinner Sn layer produced twice many whiskers compared to the thicker one. The lengths of the filament-type whiskers were similar, but the growth characteristics differed. The thinner Sn layer performed the highest whisker growth rates during the first 7 days, while the thicker Sn layer increased the growth rate only after 7 days. This phenomenon was explained by the cross-correlation of the stress relaxation ability of Sn layers and the amount of Sn atoms for whisker growth. The very high filament whisker growth rates might be caused by the interface flow mechanism, which could be initiated by the intermetallic layer growth itself. Furthermore, a correlation was found between the type of the whiskers and the morphology of the intermetallic layer underneath.

Elastic Modulus of Pb/Sn Solder Joints in Microelectronics

2002 ◽  
Author(s):  
Cemal Basaran ◽  
Jianbin Jiang
Keyword(s):  
Grain Size ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Solder Alloy ◽  
Ultrasonic Testing ◽  
Heterogeneous Materials ◽  
Testing Methods ◽  
Nano Indentation ◽  
Deformation Kinetics ◽  
Kinetics Of

Young’s modulus (E) values published in literature for the eutectic Pb37/Sn63 and near eutectic Pb40/Sn60 solder alloy vary significantly. One reason for this discrepancy is different testing methods for highly rate sensitive heterogeneous materials, like Pb/Sn alloys, yield different results. In this paper, we study different procedures used to obtain the elastic modulus; analytically, by single crystal elasticity and experimentally by ultrasonic testing and Nano indentation. We compare these procedures and propose a procedure for elastic modulus determination. The deformation kinetics of the Pb/Sn solder alloys is discussed at the grain size level.

Refinement of Size Distributions for Primary Crystallizations

1997 ◽  
Vol 481 ◽  
Author(s):  
E. Pineda ◽  
T. Pradell ◽  
D. Crespo ◽  
N. Clavaguera ◽  
J. ZHU ◽  
...  
Keyword(s):  
Grain Size ◽  
Metastable Phase ◽  
Primary Crystallization ◽  
Controlled Growth ◽  
Diffusion Controlled ◽  
Average Grain Size ◽  
Soft Impingement ◽  
Single Grain ◽  
Kinetics Of ◽  
And Diffusion

ABSTRACTThe microstructure developed in primary crystallizations is studied under realistic conditions. The primary crystallization of an amorphous alloy is modeled by considering the thermodynamics of a metastable phase transition and the kinetics of nucleation and crystal growth under isothermal annealing. A realistic growth rate, including an interface controlled growth at the beginning of the growth of each single grain and diffusion controlled growth process with soft impingement afterwards is considered. The reduction in the nucleation rate due to the compositional change in the remaining amorphous matrix is also taken into account. The microstructures developed during the transformation are obtained by using the Populational KJMA method, from the above thermodynamic and kinetic factors. Experimental data of transformed fraction, grain density, average grain size, grain size distribution and other related parameters obtained from annealed metallic glasses are modeled.

Stress analysis of spontaneous Sn whisker growth

2006 ◽  
Vol 18 (1-3) ◽  
pp. 269-281 ◽  
Author(s):  
K. N. Tu ◽  
Chih Chen ◽  
Albert T. Wu
Keyword(s):  
Stress Analysis ◽  
Whisker Growth ◽  
Sn Whisker

Driving force for Sn whisker growth in the system Cu–Sn

2008 ◽  
Vol 93 (1) ◽  
pp. 011906 ◽  
Author(s):  
M. Sobiech ◽  
U. Welzel ◽  
E. J. Mittemeijer ◽  
W. Hügel ◽  
A. Seekamp
Keyword(s):  
Driving Force ◽  
Whisker Growth ◽  
Sn Whisker

Effect of Microstructure on the Dissolution Kinetics of Copper Thin Films in Dilute Aqueous Solutions of Cupric Chloride

1993 ◽  
Vol 323 ◽  
Author(s):  
L. Harper Walsh ◽  
N. B. Feilchenfeld ◽  
J. A. Schwarz
Keyword(s):  
Grain Size ◽  
Grain Orientation ◽  
Dissolution Kinetics ◽  
Surface Region ◽  
Practical Method ◽  
Reaction Rates ◽  
Near Surface ◽  
Dilute Aqueous Solutions ◽  
Microelectronics Industry ◽  
Kinetics Of

ABSTRACTMicrostructural differences in copper deposited by four techniques commonly used in the microelectronics industry were previously reported. [1] The reaction rates were predicted using either grain size or grain orientation as the dominant microstructure characteristic. A practical method to monitor copper speciation was developed.[2] This technique was used to measure the reaction rates for the different copper films under two different etching conditions. The results are explained using grain size, grain orientation and near surface region composition.

The Effect of Micro-Alloying of Sn Plating on Mitigation of Sn Whisker Growth

2009 ◽  
Vol 38 (12) ◽  
pp. 2726-2734 ◽  
Author(s):  
Aleksandra Dimitrovska ◽  
Radovan Kovacevic
Keyword(s):  
Whisker Growth ◽  
Sn Whisker

Effect of Environment on Sn Whisker Growth during Welding of Electronic Wires

2015 ◽  
Vol 1110 ◽  
pp. 235-240 ◽  
Author(s):  
Tomomi Sakakida ◽  
Tatsuo Kubouchi ◽  
Yasuyuki Miyano ◽  
Mamoru Takahashi ◽  
Osamu Kamiya
Keyword(s):  
Energy Balance ◽  
Weld Metal ◽  
Whisker Growth ◽  
Weld Zone ◽  
Electrolytic Capacitor ◽  
Sn Whisker ◽  
Sn Whiskers ◽  
Weld Metal Microstructure ◽  
Short Circuits ◽  
Metal Microstructure

In Pb-free Al-Sn welding of electrolytic parts, single-crystal Sn whiskers easily form and can cause problems such as short circuits. Here we report that the growth of Sn whiskers in the weld zone of Al electrolytic condenser leads was suppressed in a vacuum environment. We examined the effect of the environment and weld metal microstructure in order to understand how to control and prevent whisker growth. In vacuum, the weld zone did not form whiskers after more than 100 h, whereas in air, whiskers grew within several hours. This suggests that whiskers require oxygen to form. The growth can be explained by the energy balance between the potential energy of the weld metal and the surface energy of the whisker. Our results will contribute to developing techniques for suppressing the formation of Sn whiskers during the percussion welding of Al electrolytic capacitor leads.

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