Effect of mixing ratio of non-spherical particles in colloidal silica slurry on oxide CMP

2017 ◽  
Vol 18 (10) ◽  
pp. 1333-1338 ◽  
Author(s):  
Hojun Lee ◽  
Dasol Lee ◽  
Moonsung Kim ◽  
Haedo Jeong
Keyword(s):  
Colloidal Silica ◽  
Spherical Particles ◽  
Mixing Ratio ◽  
Silica Slurry

Acid colloidal silica slurry for Cu CMP

2004 ◽  
Vol 40 (1) ◽  
pp. 26
Author(s):  
Nam-Hoon Kim ◽  
Eui-Goo Chang
Keyword(s):  
Colloidal Silica ◽  
Silica Slurry ◽  
Cu Cmp

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

High Throughput SiC Wafer Polishing with Good Surface Morphology

2007 ◽  
Vol 556-557 ◽  
pp. 753-756 ◽  
Author(s):  
Tomohisa Kato ◽  
Keisuke Wada ◽  
Eiji Hozomi ◽  
Hiroyoshi Taniguchi ◽  
Tomonori Miura ◽  
...  
Keyword(s):  
Free Surface ◽  
High Throughput ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Flat Surface ◽  
Good Surface ◽  
Wafer Polishing ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Afm Observation

We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <112 _ 0>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 μm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

Effect of Characteristics of Nano-Colloidal Silica Abrasives on Wafer Surface Roughness for Wafer Touch Polishing

2007 ◽  
Vol 121-123 ◽  
pp. 1229-1232
Author(s):  
Jin Hyung Park ◽  
Ung Yu Paik ◽  
Jea Gun Park
Keyword(s):  
Surface Roughness ◽  
High Purity ◽  
Ethyl Cellulose ◽  
Surfactant Concentration ◽  
Colloidal Silica ◽  
Wafer Surface ◽  
Silica Slurry

The purpose of this study is to reveal the mechanism of wafer touch polishing by high purity colloidal silica slurry containing organic surfactants such as HEC (hydroxyl-ethyl cellulose). The effect of surfactant concentration on wafer touch polishing was studied with the aim of improving roughness on wafer surface after polishing. As a result, the level of haze and micro-roughness are decreased with the decrease of surfactant concentration.

scholarly journals Nanoplastic removal function and the mechanical nature of colloidal silica slurry polishing

2018 ◽  
Vol 102 (6) ◽  
pp. 3141-3151 ◽  
Author(s):  
Nan Shen ◽  
Eyal Feigenbaum ◽  
Tayyab Suratwala ◽  
William Steele ◽  
Lana Wong ◽  
...  
Keyword(s):  
Colloidal Silica ◽  
Silica Slurry ◽  
Mechanical Nature

Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications

2008 ◽  
Vol 600-603 ◽  
pp. 819-822 ◽  
Author(s):  
Hirokatsu Yashiro ◽  
Tatsuo Fujimoto ◽  
Noboru Ohtani ◽  
Taizo Hoshino ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
Colloidal Silica ◽  
Wafer Surface ◽  
Thickness Variation ◽  
Atomic Force ◽  
Atomic Force Microscope Observation ◽  
Device Applications ◽  
Total Thickness Variation ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Chemical Polishing Process

The development of lapping and polishing technologies for SiC single crystal wafers has realized the fabrication of an extremely flat SiC wafer with excellent surface quality. To improve the SiC wafer flatness, we developed a four-step lapping process consisting of four stages of both-side lapping with different grit-size abrasives. We have applied this process to lapping of 2-inch-diameter SiC wafers and obtained an excellent flatness with TTV (total thickness variation) of less than 3 μm, LTV (local thickness variation) of less than 1 μm, and SORI smaller than 10 μm. We also developed a novel MCP (mechano-chemical polishing) process for SiC wafers to obtain a damage-free smooth surface. During MCP, oxidizing agents added to colloidal silica slurry, such as NaOCl and H2O2, effectively oxidize the SiC wafer surface, and then the resulting oxides are removed by colloidal silica. AFM (atomic force microscope) observation of polished wafer surface revealed that this process allows us to have excellent surface smoothness as low as Ra=0.168 nm and RMS=0.2 nm.

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