Effect of Organic Amine in Colloidal Silica Slurry on Polishing-rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization

2019 ◽  
Vol 13 (4) ◽  
pp. 51-57 ◽  
Author(s):  
Jin-Hyung Park ◽  
Hao Cui ◽  
Hee-Sub Hwang ◽  
Ungyu Paik ◽  
Hyung-Soon Park ◽  
...  
Keyword(s):  
Colloidal Silica ◽  
Chemical Mechanical Planarization ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Organic Amine ◽  
Silica Slurry

Acid colloidal silica slurry for Cu CMP

2004 ◽  
Vol 40 (1) ◽  
pp. 26
Author(s):  
Nam-Hoon Kim ◽  
Eui-Goo Chang
Keyword(s):  
Colloidal Silica ◽  
Silica Slurry ◽  
Cu Cmp

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film

2006 ◽  
Vol 914 ◽  
Author(s):  
Kenichi Sekimoto ◽  
Taishi Furukawa ◽  
Noriaki Oshima ◽  
Ken-ichi Tada ◽  
Tetsu Yamakawa
Keyword(s):  
Argon Plasma ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Composition Analysis ◽  
1H And 13C Nmr ◽  
Layer Deposition ◽  
Tantalum Films

AbstractA novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

Study on ignition performance of tantalum nitride film energy exchangers based on new bridge area

2021 ◽  
pp. 2140020
Author(s):  
Xiao-Ming Ren ◽  
Ke-Xin Yu ◽  
Wei Ren ◽  
Lan Liu ◽  
Rui-Zhen Xie ◽  
...  
Keyword(s):  
Experimental Results ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Ignition Energy ◽  
Ignition Voltage ◽  
Action Time ◽  
Mems Technology ◽  
New Type ◽  
Film Transducer

In order to reduce the ignition energy of the tantalum nitride film transducer, a new type of energy exchangers bridge area was designed in this paper, and it was fabricated by MEMS technology. The parameters of ignition voltage, ignition energy, as well as action time were tested. The experimental results showed that in terms of ignition voltage, ignition energy, and action time, the value of the energy exchangers element of the new bridge area was lower than the value of the energy exchangers element of the conventional bridge area. In addition, ignition performance can be reduced by many energy exchangers in the new bridge area.

Substrate composition effects on the interfacial fracture of tantalum nitride films

1999 ◽  
Vol 14 (6) ◽  
pp. 2306-2313 ◽  
Author(s):  
N. R. Moody ◽  
A. Strojny ◽  
D. L. Medlin ◽  
A. Talin ◽  
W. W. Gerberich
Keyword(s):  
Aluminum Nitride ◽  
Surface Hardness ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Interface Composition ◽  
Near Surface ◽  
Substrate Composition ◽  
A Value ◽  
Composition And Structure ◽  
Film Substrate

In this study we combined nanoscratch testing with a multilayer sapphire and aluminum nitride single-substrate system to determine the effects of interface composition and structure on susceptibility to fracture of hard, thin tantalum nitride films. Nanoindentation tests showed that the elastic moduli of the tantalum nitride and aluminum nitride films, as well as the sapphire substrate, were essentially equal at 400 GPa. On both portions of the substrate, these tests also showed that near surface hardness was near 35 GPa. Nanoscratch tests triggered long blisters and circular spalls on both the sapphire and aluminum nitride portions of the substrate. The blisters showed that the tantalum nitride film was subjected to a compressive residual stress of −6.7 GPa. The spalls showed that failure occurred along the tantalum nitride film-substrate interface regardless of substrate composition. Most importantly, the blisters and spalls showed that the mode I componentof the fracture energies was essentially equal on both substrate materials at a value near 3.1 J/m2. These energies are on the order of the energies for metallic bonding.

High Throughput SiC Wafer Polishing with Good Surface Morphology

2007 ◽  
Vol 556-557 ◽  
pp. 753-756 ◽  
Author(s):  
Tomohisa Kato ◽  
Keisuke Wada ◽  
Eiji Hozomi ◽  
Hiroyoshi Taniguchi ◽  
Tomonori Miura ◽  
...  
Keyword(s):  
Free Surface ◽  
High Throughput ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Flat Surface ◽  
Good Surface ◽  
Wafer Polishing ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Afm Observation

We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to <112 _ 0>. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 μm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area.

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