Effect of Characteristics of Nano-Colloidal Silica Abrasives on Wafer Surface Roughness for Wafer Touch Polishing

2007 ◽  
Vol 121-123 ◽  
pp. 1229-1232
Author(s):  
Jin Hyung Park ◽  
Ung Yu Paik ◽  
Jea Gun Park
Keyword(s):  
Surface Roughness ◽  
High Purity ◽  
Ethyl Cellulose ◽  
Surfactant Concentration ◽  
Colloidal Silica ◽  
Wafer Surface ◽  
Silica Slurry

The purpose of this study is to reveal the mechanism of wafer touch polishing by high purity colloidal silica slurry containing organic surfactants such as HEC (hydroxyl-ethyl cellulose). The effect of surfactant concentration on wafer touch polishing was studied with the aim of improving roughness on wafer surface after polishing. As a result, the level of haze and micro-roughness are decreased with the decrease of surfactant concentration.

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications

2008 ◽  
Vol 600-603 ◽  
pp. 819-822 ◽  
Author(s):  
Hirokatsu Yashiro ◽  
Tatsuo Fujimoto ◽  
Noboru Ohtani ◽  
Taizo Hoshino ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
Colloidal Silica ◽  
Wafer Surface ◽  
Thickness Variation ◽  
Atomic Force ◽  
Atomic Force Microscope Observation ◽  
Device Applications ◽  
Total Thickness Variation ◽  
Silica Slurry ◽  
Sic Wafer ◽  
Chemical Polishing Process

The development of lapping and polishing technologies for SiC single crystal wafers has realized the fabrication of an extremely flat SiC wafer with excellent surface quality. To improve the SiC wafer flatness, we developed a four-step lapping process consisting of four stages of both-side lapping with different grit-size abrasives. We have applied this process to lapping of 2-inch-diameter SiC wafers and obtained an excellent flatness with TTV (total thickness variation) of less than 3 μm, LTV (local thickness variation) of less than 1 μm, and SORI smaller than 10 μm. We also developed a novel MCP (mechano-chemical polishing) process for SiC wafers to obtain a damage-free smooth surface. During MCP, oxidizing agents added to colloidal silica slurry, such as NaOCl and H2O2, effectively oxidize the SiC wafer surface, and then the resulting oxides are removed by colloidal silica. AFM (atomic force microscope) observation of polished wafer surface revealed that this process allows us to have excellent surface smoothness as low as Ra=0.168 nm and RMS=0.2 nm.

Effect of Etchant on SOI Wafer Surface Roughness for APTES Silanization

2019 ◽  
Vol 17 ◽  
pp. 700-706
Author(s):  
N.N. Alias ◽  
K.A. Yaacob ◽  
C.K.Yew
Keyword(s):  
Surface Roughness ◽  
Wafer Surface

Observation in the Surface Roughness of Silicon Wafer during Semi-Fixed Abrasive Machining with Large Grains

2009 ◽  
Vol 69-70 ◽  
pp. 253-257
Author(s):  
Ping Zhao ◽  
Jia Jie Chen ◽  
Fan Yang ◽  
K.F. Tang ◽  
Ju Long Yuan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Processing Parameters ◽  
Wafer Surface ◽  
Abrasive Machining ◽  
Fixed Abrasive ◽  
Is Failure ◽  
Better Than

Semi-fixed abrasive is a novel abrasive. It has a ‘trap’ effect on the hard large grains that can prevent defect effectively on the surface of the workpiece which is caused by large grains. In this paper, some relevant experiments towards silicon wafers are carried out under the different processing parameters on the semi-fixed abrasive plates, and 180# SiC is used as large grains. The processed workpieces’ surface roughness Rv are measured. The experimental results show that the surface quality of wafer will be worse because of higher load and faster rotating velocity. And it can make a conclusion that the higher proportion of bond of the plate, the weaker of the ‘trap’ effect it has. Furthermore the wet environment is better than dry for the wafer surface in machining. The practice shows that the ‘trap’ effect is failure when the workpiece is machined by abrasive plate which is 4.5wt% proportion of bond in dry lapping.

Acid colloidal silica slurry for Cu CMP

2004 ◽  
Vol 40 (1) ◽  
pp. 26
Author(s):  
Nam-Hoon Kim ◽  
Eui-Goo Chang
Keyword(s):  
Colloidal Silica ◽  
Silica Slurry ◽  
Cu Cmp

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Formability of the Layer Additive Ceramic Part

2008 ◽  
Vol 594 ◽  
pp. 241-248 ◽  
Author(s):  
Fwu Hsing Liu ◽  
Yunn Shiuan Liao ◽  
Hsiu Ping Wang
Keyword(s):  
Surface Roughness ◽  
Laser Scanning ◽  
Selective Laser Sintering ◽  
Single Layer ◽  
Dimensional Accuracy ◽  
Scanning Speed ◽  
Laser Sintering ◽  
Single Line ◽  
Laser Scanning Speed ◽  
Silica Slurry

The material in powder state has long been used by selective laser sintering (SLS) for making rapid prototyping (RP) parts. A new approach to fabricate smoother surface roughness RP parts of ceramic material from slurry-sate has been developed in this study. The silica slurry was successfully laser-gelling in a self-developed laser sintering equipment. In order to overcome the insufficient bonding strength between layers, a strategy is proposed to generate ceramic parts from a single line, a single layer, to multi-layers of gelled cramic in this paper. It is found that when the overlap of each single line is 25% and the over-gel between layers is 30%, stronger and more accurate dimensional parts can be obtained under a laser power of 15W, a laser scanning speed of 250 mm/s, and a layer thickness of 0.1 mm. The 55:45 wt. % of the proportion between the silica powder and silica solution results in suitable viscosity of the ceramic slurries without precipitation. Furthermore, the effects of process parameters for the dimensional accuracy and surface roughness of the gelled parts are investigated and appropriate parameters are obtained.

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

2008 ◽  
Vol 389-390 ◽  
pp. 493-497 ◽  
Author(s):  
Sung Chul Hwang ◽  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Surface Roughness ◽  
Statistical Analysis ◽  
Process Parameters ◽  
Wafer Surface ◽  
Wafer Polishing ◽  
Ultra Precision ◽  
Important Processing ◽  
The Many ◽  
Selection Of ◽  
Si Wafer

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

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