Performance Investigation of Gate Engineered tri-Gate SOI TFETs with Different High-K Dielectric Materials for Low Power Applications

Silicon ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1819-1829 ◽  
Author(s):  
P. Vimala ◽  
T. S. Arun Samuel ◽  
M. Karthigai Pandian
Author(s):  
Ajay Kumar ◽  
Shankul Saini ◽  
Abhisht Gupta ◽  
Neha Gupta ◽  
Madan Mohan Tripathi ◽  
...  
Keyword(s):  
High K ◽  

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.


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