Selective Growth of Semiconducting Silicide Phase Based on the Growth Parameters

Silicon ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 2497-2501
Author(s):  
A. N. Fouda ◽  
E. A. Eid
Keyword(s):  
Growth Parameters ◽  
Selective Growth ◽  
Silicide Phase

Controlling reaction paths for ultra-fast growth of inorganic nanowires floating in the gas phase

Nanoscale ◽  
2021 ◽  
Author(s):  
Richard S. Schäufele ◽  
Miguel Vazquez-Pufleau ◽  
Afshin Pendashteh ◽  
Juan J. Vilatela
Keyword(s):  
Gas Phase ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Selective Growth ◽  
Fast Growth ◽  
Reaction Paths ◽  
Inorganic Nanowires

Identification and understanding of selective growth parameters of 1D nanomaterials by floating catalysts chemical vapour deposition.

Lateral Epitaxy Formation Mechanism And Microstructure Of Selectively Grown Gan Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
Tsvetanka Zheleva ◽  
Ok-Hyun Nam ◽  
Jason D. Griffin ◽  
Michael D. Bremser ◽  
Robert F. Davis
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Growth Parameters ◽  
Growth Front ◽  
Selective Growth ◽  
Threading Dislocations ◽  
Lateral Growth ◽  
Dislocations Density ◽  
Thermal Stress Relaxation ◽  
Lateral Epitaxy

AbstractThe microstructure and the lateral epitaxy mechanism of formation of homoepitaxially and selectively grown GaN structures within windows in SiO2 masks have been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Three types of samples and each of their microstructures as a function of the geometry of the mask pattern and the selective growth parameters have been studied: GaN pyramids, GaN stripes oriented along [1100] and [1120] directions, and GaN continuous layers. Observations via TEM showed in all three types of samples that the laterally overgrown GaN exhibit four-to-six orders of magnitude reduction in the dislocation density compared to the vertically grown GaN films. Owing to the lateral epitaxy, the threading dislocations bend when the growth front changes from vertical to lateral, thus changing their character from being mostly threading dislocations of mixed or edge character, to being basal plane dislocations with lines parallel to the interfacial planes. The underlying GaN provided the crystallographic template for the initial vertical selective growth through the openings (windows) in the SiO2 mask. The GaN structures in these areas had a threading dislocations density of 108-1010 cm−2. Lateral growth of the GaN films over the amorphous SiO2 mask, resulted in a reduction of the dislocation density to <106 cm−2. The primary materials source for both the vertical and lateral growth of the structures was the vapor phase. Essentially no GaN deposited on the SiO2 because of the very low sticking coefficients of Ga and N species on SiO2. Thermal stress relaxation is responsible for the final morphology and microstructure in these selectively grown structures.

Analysis of 2D and 3D defects associated with precipitation of Cu in silicon

1991 ◽  
Vol 49 ◽  
pp. 870-871
Author(s):  
P.M. Rice ◽  
MJ. Kim ◽  
R.W. Carpenter
Keyword(s):  
Colony Growth ◽  
Dark Field ◽  
Dark Side ◽  
Silicide Phase ◽  
Strain Fields ◽  
Near Surface ◽  
Unknown Composition ◽  
Secondary Precipitates ◽  
20 Nm ◽  
2D And 3D

Extrinsic gettering of Cu on near-surface dislocations in Si has been the topic of recent investigation. It was shown that the Cu precipitated hetergeneously on dislocations as Cu silicide along with voids, and also with a secondary planar precipitate of unknown composition. Here we report the results of investigations of the sense of the strain fields about the large (~100 nm) silicide precipitates, and further analysis of the small (~10-20 nm) planar precipitates.Numerous dark field images were analyzed in accordance with Ashby and Brown's criteria for determining the sense of the strain fields about precipitates. While the situation is complicated by the presence of dislocations and secondary precipitates, micrographs like those shown in Fig. 1(a) and 1(b) tend to show anomalously wide strain fields with the dark side on the side of negative g, indicating the strain fields about the silicide precipitates are vacancy in nature. This is in conflict with information reported on the η'' phase (the Cu silicide phase presumed to precipitate within the bulk) whose interstitial strain field is considered responsible for the interstitial Si atoms which cause the bounding dislocation to expand during star colony growth.

Studies of Ge/Si(100) and Observation of Atomic Steps on Si(100) using Biassed Secondary Electron Imaging in a UHV STEM

1990 ◽  
Vol 48 (1) ◽  
pp. 308-309
Author(s):  
Mohan Krishnamurthy ◽  
Jeff S. Drucker ◽  
John A. Venablest
Keyword(s):  
Secondary Electron ◽  
Critical Thickness ◽  
Surface Defects ◽  
Film Growth ◽  
Growth Parameters ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Epitaxial Crystal Growth ◽  
Electron Imaging

Secondary Electron Imaging (SEI) has become a useful mode of studying surfaces in SEM[1] and STEM[2,3] instruments. Samples have been biassed (b-SEI) to provide increased sensitivity to topographic and thin film deposits in ultra high vacuum (UHV)-SEM[1,4]; but this has not generally been done in previous STEM studies. The recently developed UHV-STEM ( codenamed MIDAS) at ASU has efficient collection of secondary electrons using a 'parallelizer' and full sample preparation system[5]. Here we report in-situ deposition and annealing studies on the Ge/Si(100) epitaxial system, and the observation of surface steps on vicinal Si(100) using b-SEI under UHV conditions in MIDAS.Epitaxial crystal growth has previously been studied using SEM and SAM based experiments [4]. The influence of surface defects such as steps on epitaxial growth requires study with high spatial resolution, which we report for the Ge/Si(100) system. Ge grows on Si(100) in the Stranski-Krastonov growth mode wherein it forms pseudomorphic layers for the first 3-4 ML (critical thickness) and beyond which it clusters into islands[6]. In the present experiment, Ge was deposited onto clean Si(100) substrates misoriented 1° and 5° toward <110>. This was done using a mini MBE Knudsen cell at base pressure ~ 5×10-11 mbar and at typical rates of 0.1ML/min (1ML =0.14nm). Depositions just above the critical thickness were done for substrates kept at room temperature, 375°C and 525°C. The R T deposits were annealed at 375°C and 525°C for various times. Detailed studies were done of the initial stages of clustering into very fine (∼1nm) Ge islands and their subsequent coarsening and facetting with longer anneals. From the particle size distributions as a function of time and temperature, useful film growth parameters have been obtained. Fig. 1 shows a b-SE image of Ge island size distribution for a R T deposit and anneal at 525°C. Fig.2(a) shows the distribution for a deposition at 375°C and Fig.2(b) shows at a higher magnification a large facetted island of Ge. Fig.3 shows a distribution of very fine islands from a 525°C deposition. A strong contrast is obtained from these islands which are at most a few ML thick and mottled structure can be seen in the background between the islands, especially in Fig.2(a) and Fig.3.

Evaluation of Azadirachtin on Arthrospira plantensis Gomont growth parameters and antioxidant enzymes

2020 ◽  
Vol 56 ◽  
pp. 8
Author(s):  
Hatice Tunca ◽  
Ali Doğru ◽  
Feray Köçkar ◽  
Burçin Önem ◽  
Tuğba Ongun Sevindik
Keyword(s):  
Enzyme Activity ◽  
Growth Parameters ◽  
Arthrospira Platensis ◽  
Proline Content ◽  
Enzyme Analysis ◽  
Free Proline ◽  
Sod Activity ◽  
Pesticide Pollution ◽  
Antioxidant Parameters ◽  
Mda Content

Azadirachtin (Aza) used as insecticide due to inhibiting growth of insects and preventing them from feeding on plants. To understand the effects of contamination of this insecticide on phototrophs, and to determine the responses of these organisms against these insecticides are extremely important in understanding how the ecosystem is affected. In this study, chlorophyll-a amount, OD 560 and antioxidant parameters (total SOD, APX, GR, Proline, MDA and H2O2) were determined in order to understand the effect of Aza on Arthrospira platensis Gomont. Aza was applied between 0–20 μg mL−1 concentrations for 7 days in the study. Enzyme analysis was conducted at the end of the 7th day. There was a statistically significant decrease in the absorbance of OD560 and the chlorophyll-a content in A. platensis cultures exposed to the Aza (0–20 μg mL−1) during 7 days due to the increase in pesticide levels. SOD activity decreased at 8, 16 and 20 μg mL−1 concentrations; GR enzyme activity showed a significant decrease compared to the control at a concentration of 20 μg mL−1. APX activity did not change significantly compared to control. The MDA content increased significantly at 16 and 20 μg mL−1 concentrations. The H2O2 content significantly increased at 12, 16 and 20 μg mL−1 concentrations (p < 0.05) while the free proline content decreased at 4 μg mL−1 concentration (p < 0.05). As a result, regarding the Aza concentrations used in this study may be a step to prevent pesticide pollution in the environment.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Selective Growth of Self-Assembling Si and SiGe Quantum Dots

2014 ◽  
Vol E97.C (5) ◽  
pp. 393-396
Author(s):  
Katsunori MAKIHARA ◽  
Mitsuhisa IKEDA ◽  
Seiichi MIYAZAKI
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Self Assembling

Growth of Dracaena marginata and Spathiphyllum ‘Petite’ in Sphagnum Peat- and Coconut Coir Dust-based Growing Media

1999 ◽  
Vol 17 (1) ◽  
pp. 49-52 ◽  
Author(s):  
Robert H. Stamps ◽  
Michael R. Evans
Keyword(s):  
Growth Parameters ◽  
Cocos Nucifera ◽  
Greenhouse Production ◽  
Growing Media ◽  
Sphagnum Peat ◽  
Affected Plant ◽  
Coir Dust ◽  
Media Component ◽  
The Media ◽  
Cocos Nucifera L

Abstract A comparison was made of Canadian sphagnum peat (SP) and Philippine coconut (Cocos nucifera L.) coir dust (CD) as growing media components for greenhouse production of Dracaena marginata Bak. and Spathiphyllum Schott ‘Petite’. Three soilless foliage plant growing mixes (Cornell, Hybrid, University of Florida #2 [UF-2]) were prepared using either SP or CD and pine bark (PB), vermiculite (V), and/or perlite (P) in the following ratios (% by vol): Cornell = 50 CD or SP:25 V:25 P, Hybrid = 40 CD or SP:30 V:30 PB, UF-2 = 50 CD or SP: 50 PB. Dracaena root growth was not affected by treatments but there were significant mix × media component interactions that affected plant top growth parameters. In general, the growth and quality of D. marginata were reduced by using CD in Cornell, had no effect in Hybrid, and increased in UF-2. S. ‘Petite’ grew equally well in all growing mixes regardless of whether CD or SP was used; however, plants grew more in Cornell and Hybrid than in UF-2. S. ‘Petite’ roots, which were infested with Cylindrocladium spathiphylli, had higher grades when grown in CD than when the media contained SP.

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