scholarly journals A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

Silicon ◽  
2021 ◽  
Author(s):  
Vidyadhar Gupta ◽  
Himanshi Awasthi ◽  
Nitish Kumar ◽  
Amit Kumar Pandey ◽  
Abhinav Gupta
Keyword(s):  
Threshold Voltage ◽  
Subthreshold Current ◽  
Novel Approach

scholarly journals A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

2021 ◽  
Author(s):  
Vidyadhar Gupta ◽  
Himanshi Awasthi ◽  
Nitish Kumar ◽  
Amit Kumar Pandey ◽  
ABHINAV GUPTA
Keyword(s):  
Threshold Voltage ◽  
Oxide Thickness ◽  
Channel Length ◽  
Analytical Models ◽  
Diffusion Method ◽  
Central Channel ◽  
Subthreshold Current ◽  
As Doping ◽  
Novel Approach ◽  
Channel Potential

Abstract This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (NDn), channel thickness (tsi), oxide thickness (tox), and channel length ratio (L1 : L2). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.

Substrate bias dependence of short-channel MOSFET threshold voltage-a novel approach

1988 ◽  
Vol 35 (2) ◽  
pp. 167-173 ◽  
Author(s):  
A. Roychaudhuri ◽  
M. Jha ◽  
S.K. Sharma ◽  
P.A. Govindacharyulu ◽  
M.J. Zarabi
Keyword(s):  
Threshold Voltage ◽  
Substrate Bias ◽  
Short Channel ◽  
Novel Approach
Sign in / Sign up

Export Citation Format

Share Document