Ex situ and in situ determination of stress distributions in chromium oxide films by raman microscopy

1992 ◽  
Vol 33 (1) ◽  
pp. 1-12 ◽  
Author(s):  
J Birnie ◽  
C Craggs ◽  
D.J Gardiner ◽  
P.R Graves
Keyword(s):  
Chromium Oxide ◽  
Oxide Films ◽  
Raman Microscopy ◽  
Ex Situ ◽  
Stress Distributions

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

Microcrack Nucleation and Crack Propagation in Equiaxed γ TiAl

2002 ◽  
Vol 753 ◽  
Author(s):  
Martin A. Crimp ◽  
Boon-Chi Ng ◽  
Benjamin A. Simkin ◽  
Thomas R. Bieler
Keyword(s):  
Ex Situ ◽  
Contrast Imaging ◽  
Active Deformation ◽  
Electron Channeling ◽  
Microcrack Initiation ◽  
Grain Orientations ◽  
Contrast Analysis ◽  
Defect Imaging

ABSTRACTTo gain a better understanding of the ductility limitations in TiAl alloys, the mechanisms involved in deformation strain transfer and/or microcrack initiation at grain boundaries have been examined in an equiaxed near-γ alloy. These studies have been carried out on both in-situ and ex-situ deformed bulk samples using scanning electron microscopy (SEM) techniques for both orientation analysis and deformation defect imaging. Selected area electron channeling patterns (SACPs) have allowed determination of grain orientations, eliminating ambiguity between the a and c axes. Deformation twins and dislocations have been imaged in the bulk samples using electron channeling contrast imaging (ECCI). A combination of ECCI contrast analysis and trace analysis based on orientations determined from SACP has allowed identification of the active deformation systems. Microcracks have been found to initiate at γ-γ boundaries as a result of an inability to adequately transfer twin strain from grain to grain. Once initiated, cracks propagate through cleavage and re-nucleation of grain boundary microcracks in front of the advancing crack. A geometric based predictive factor has been developed that accounts for microcrack initiation at γ-γ boundaries based in deformation twinning and strain accommodation by ordinary dislocations.

Effect of Interfaces on Fiber Fracture in Mg and MgLi Matrix Composites

2005 ◽  
Vol 482 ◽  
pp. 355-358 ◽  
Author(s):  
S. Kúdela ◽  
H. Wendrock ◽  
L. Ptáček ◽  
S. Menzel ◽  
K. Wetzig
Keyword(s):  
Ex Situ ◽  
Matrix Composites ◽  
Interfacial Bond ◽  
Fiber Fracture ◽  
Composite Failure ◽  
Pull Out ◽  
Fiber Fragmentation ◽  
Scanning Electron

Fibers fracture in tensile strained Mg and MgLi matrix composites strengthened with ~10% vol. short δ-Al2O3 fibers (Saffil) is investigated by „in-situ“ scanning electron microscopy and ex-situ“ determination of the length of fibers chemically recovered from tensile failed composites. Little interfacial reaction in Mg matrix composite results in poor interfacial bond so that composite failure proceeds via fiber pull-out with negligible fiber fragmentation. On the other hand, extensive fiber/matrix reaction in MgLi matrix composites promotes formation of strong interfaces which are linked with multiple fiber cross-breakage during tensile straining. These results are consistent with experimental tensile strengths of related composites.

In-situ and ex-situ characterization of surface oxide films on AB5-type metal hydride electrodes

1999 ◽  
Vol 293-295 ◽  
pp. 747-750 ◽  
Author(s):  
J.M Nan ◽  
Y Yang ◽  
J.K You ◽  
X.Q Li ◽  
Z.G Lin
Keyword(s):  
Metal Hydride ◽  
Oxide Films ◽  
Surface Oxide ◽  
Ex Situ ◽  
Metal Hydride Electrodes

Non-destructive in situ determination of pigments in 15th century wall paintings by Raman microscopy

2003 ◽  
Vol 480 (2) ◽  
pp. 317-325 ◽  
Author(s):  
Alessandra Perardi ◽  
Lorenzo Appolonia ◽  
Piero Mirti
Keyword(s):  
Raman Microscopy ◽  
Wall Paintings ◽  
15Th Century ◽  
Non Destructive

Determination of the Solubility of Tin in Indium Oxide Using In Situ and Ex Situ X-Ray Diffraction

2011 ◽  
Vol 95 (2) ◽  
pp. 809-815 ◽  
Author(s):  
G. B. González ◽  
T. O. Mason ◽  
J. S. Okasinski ◽  
T. Buslaps ◽  
V. Honkimäki
Keyword(s):  
Indium Oxide ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray

In situ and ex situ characterisation of oxide films formed on strained stainless steel surfaces in high-temperature water

2006 ◽  
Vol 252 (24) ◽  
pp. 8580-8588 ◽  
Author(s):  
Yoichi Takeda ◽  
Tetsuo Shoji ◽  
Martin Bojinov ◽  
Petri Kinnunen ◽  
Timo Saario
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Oxide Films ◽  
Ex Situ ◽  
High Temperature Water ◽  
Steel Surfaces ◽  
Temperature Water

Determination of the Roughness of CVD Surfaces by Laser Scattering

1991 ◽  
Vol 250 ◽  
Author(s):  
Max Klein ◽  
Bernard Gallois
Keyword(s):  
Scattered Light ◽  
Spatial Arrangement ◽  
Ex Situ ◽  
Root Mean Square Roughness ◽  
Statistical Parameters ◽  
Laser Scattering ◽  
Light Spectra ◽  
Good Agreement

AbstractA laser scattering apparatus was developed for the determination of surface roughness and other surface statistical parameters of chemically vapor-deposited coatings. Visual examination of HeNe laser scattering patterns reflected from polished sapphire and CVD titanium nitride surfaces showed a sensitivity to roughness differences of tens of nanometers. The scattering apparatus was integrated with a cold-wall CVD reactor. The root mean square roughness of silicon carbide deposits on silicon in the early stages of growth was determined from the intensity of the specularly reflected beam. Changes in roughness and the spatial arrangement of depositing crystallites were monitored in situ by angular resolution of the scattered light spectra. Both ex situ and in situ results were in good agreement with profilometric examinations of the rough surfaces.

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