High-density high-reliability multichip hybrid packaging with thin films and beam leads

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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Self-assembled L10 FePt thin films for high-density magnetic recording

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2006.01.054 ◽

2006 ◽

Vol 303 (2) ◽

pp. e255-e257 ◽

Cited By ~ 3

Author(s):

Nobuhiro Katayama ◽

Xiaoxi Liu ◽

Akimitsu Morisako

Keyword(s):

Thin Films ◽

Magnetic Recording ◽

High Density ◽

Self Assembled ◽

High Density Magnetic Recording ◽

Fept Thin Films

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Controlled Growth and Grafting of High-Density Au Nanoparticles on Zinc Oxide Thin Films by Photo-Deposition

Langmuir ◽

10.1021/acs.langmuir.7b04105 ◽

2018 ◽

Vol 34 (5) ◽

pp. 1932-1940 ◽

Cited By ~ 8

Author(s):

Jérémy Cure ◽

Hala Assi ◽

Kévin Cocq ◽

Lorena Marìn ◽

Katia Fajerwerg ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Au Nanoparticles ◽

High Density ◽

Controlled Growth ◽

Oxide Thin Films

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Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2016cicmt-tha13 ◽

2016 ◽

Vol 2016 (CICMT) ◽

pp. 000175-000182

Author(s):

Carol Putman ◽

Rachel Cramm Horn ◽

Ambrose Wolf ◽

Daniel Krueger

Keyword(s):

Thin Film ◽

Thin Films ◽

Low Temperature ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

High Reliability ◽

Interface Energy ◽

Molecular Stability ◽

Thin Film Adhesion ◽

Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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