Pressure dependence of the refractive index of diamond, cubic silicon carbide and cubic boron nitride

1996 ◽  
Vol 99 (12) ◽  
pp. 943-948 ◽  
Author(s):  
N.M. Balzaretti ◽  
J.A.H. da Jornada
1989 ◽  
Vol 162 ◽  
Author(s):  
Lawrence C. Snyder ◽  
Arthur H. Edwards ◽  
Peter Deak

ABSTRACTWe have employed a 32 atom cyclic-cluster and the Modified Intermediate Neglect of Differential Overlap (MINDO/3) method to compute the lattice constant, band structure, heat of formation and other properties of cubic boron nitride, diamond and silicon nitride. The computational scheme we have employed will permit studies of defects in these materials.


2014 ◽  
Vol 70 (a1) ◽  
pp. C760-C760
Author(s):  
Shigeaki Ono

Cubic boron nitride (c-BN) has some outstanding properties, such as hardness, chemical inertness, high temperature stability, and high thermal conductivity. The Raman spectrum of c-BN exhibits two intense lines at 1054 and 1305 cm-1 under ambient conditions, corresponding to the Brillouin zone center transverse optical (TO) and longitudinal optical (LO) modes, respectively. Previous studies have reported the pressure and temperature dependences of the frequency shift of the modes up to 40 GPa and 2300 K. The Raman line of the LO mode overlaps an intense Raman line of diamond at pressures higher than 3 GPa. Therefore, it is difficult to observe the LO line in high-pressure experiments using the diamond anvil cell. In contrast, previous studies proposed that the TO mode could be used as the pressure calibrant in diamond anvil cells under high pressure and temperature conditions. In this study, we used a diamond anvil cell high-pressure apparatus [1] combined with a Raman spectrometer system to investigate changes in the Raman line of c-BN. The use of a synchrotron radiation source made it possible to determine the precise pressure in the sample chamber. In this study, the temperature and pressure dependences of the Raman spectrum of the TO mode of cubic boron nitride were calibrated for applications to a Raman spectroscopy pressure sensor in optical cells to about 800 K and 90 GPa. A significant deviation from linearity of the pressure dependence is confirmed at pressures above 20 GPa. At ambient temperature, dv/dP slopes are 3.41 and 2.04 cm-1/GPa at 0 and 90 GPa, respectively. The pressure dependence does not significantly change with temperature, as determined from experiments conducted up to 800 K. At pressures above 90 GPa, the Raman spectrum of the TO mode cannot be observed because of an overlap of the signals of cubic boron nitride and diamond used as the anvils in the high-pressure cell.


2020 ◽  
Vol 57 (6) ◽  
pp. 53-64
Author(s):  
N.M. Huliieva ◽  
D.O. Somov ◽  
V.V. Pasternak ◽  
L.M. Samchuk ◽  
T.I. Chetverzhuk

AbstractThe issue of grinding saponite–titanium composites has not been considered in the machine building industry yet. The reason is that the chips are stuck on the working surfaces of abrasive tools made of silicon carbide and electrocorundum. This is due to the high adhesive activity at operating cutting temperatures between the composite and traditional abrasives.The article aims at studying the grinding of saponite–titanium composites using abrasive tools in various cutting modes based on parametric and non-parametric statistical methods.To solve this problem, high porous wheels (HPW) made of cubic boron nitride CBN30 with 100 % concentration on a bond V (K27), a pore-forming KF40, varied grains: B76, B126, B151 (ISO 6106:2013) – and hardness: M and O (ISO 525:2013) were used to grind saponite–titanium composites. Additionally, the Norton wheels from green silicon carbide with a normal porosity 39C (46; 60) K8 VK and with different grain size were tested. Norton wheels provide reduction of roughness height by 1.4–1.5 times in comparison with boron nitride HPW. These are recommended for the finishing grinding stage and HPW CBN30 – the preliminary to reduce the thermal effects on composites. By processing stability, the Norton wheels with grain 46 rank first, and among boron nitride HPW – CBN30 B76 100 OV K27–KF40.


2003 ◽  
Vol 772 ◽  
Author(s):  
K. Saulig-Wenger ◽  
D. Cornu ◽  
F. Chassagneux ◽  
P. Miele ◽  
T. Epicier

Abstracth-BN sheathed β-SiC nanocables were synthesized under argon at 1200°C by the direct thermal treatment of a silicon powder mixed with turbostratic boron nitride. The structure and the chemical composition of these nanocables have been investigated by HRTEM, EDX and EELS. They have a diameter ranging from 10 to 80 nm. The core of these nanocomposites is composed of pure cubic silicon carbide and the outer layers have been shown to be hexagonal boron nitride planes, set in a parallel direction to the nanocables axis.


1996 ◽  
Vol 69 (2) ◽  
pp. 227-229 ◽  
Author(s):  
V. A. Gubanov ◽  
L. A. Hemstreet ◽  
C. Y. Fong ◽  
Barry M. Klein

1993 ◽  
Vol 48 (4) ◽  
pp. 2777-2780 ◽  
Author(s):  
A. Onodera ◽  
M. Nakatani ◽  
M. Kobayashi ◽  
Y. Nisida ◽  
O. Mishima

Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.


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