Structure and defects induced by electron beam irradiation in silicon substrates and EPR ribbons

1989 ◽  
Vol 43 (1-4) ◽  
pp. 111-116
Author(s):  
R. M'Ghaieth ◽  
R. Gauthier ◽  
P. Pinard
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Silicon Substrates ◽  
Beam Irradiation

Systematic Studies of Fullerene Derivative Electron Beam Resists

1999 ◽  
Vol 584 ◽  
Author(s):  
A. P. G. Robinson ◽  
R. E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E. J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dissolution Rate ◽  
Organic Solvents ◽  
Spin Coating ◽  
Electron Beam Irradiation ◽  
Fullerene Derivative ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Negative Tone ◽  
20 Nm

AbstractWe report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of fourteen different mono, tris and tetra adduct methanofullerene C60 derivatives were produced by spin coating on hydrogen terminated silicon substrates. Exposure of the films to a 20 keV electron beam substantially altered the dissolution rate of the derivative films in organic solvents such as monochlorobenzene. All of the derivatives exhibited negative tone resist behaviour with sensitivities between ∼ 8.5 × 10-4 and ∼ 4 × 10-3 C/cm2 107, much higher than that of C60. Features with widths of ∼ 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac based resist (SAL601).

Analysis of Charging Phenomena of Polymer Films on Silicon Substrates under Electron Beam Irradiation

2008 ◽  
Vol 47 (6) ◽  
pp. 4890-4892 ◽  
Author(s):  
Masaaki Yasuda ◽  
Kosuke Morimoto ◽  
Yasuaki Kainuma ◽  
Hiroaki Kawata ◽  
Yoshihiko Hirai
Keyword(s):  
Electron Beam ◽  
Polymer Films ◽  
Electron Beam Irradiation ◽  
Silicon Substrates ◽  
Beam Irradiation

Formation of Titanium Disilicide by Electron Beam Irradiation Under Non Steady State Conditions

1983 ◽  
Vol 25 ◽  
Author(s):  
E A Maydell-Ondrusz ◽  
R E Harper ◽  
A Abid ◽  
P L F Hemment ◽  
K G Stephens
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Titanium Disilicide ◽  
X Ray ◽  
Nominal Thickness ◽  
Power Densities ◽  
Backscattering Analysis ◽  
Scanning Electron

ABSTRACTTitanium disilicide was formed by multiply-scanned electron beam irradiation of titanium films of nominal thickness 1200Å on silicon substrates. Samples were annealed at power densities of 2 to 52.5Wcm−2 using times in the range of 1 to a few hundreds seconds. Rutherford backscattering analysis was used to study the metal redistribution and to estimate the approximate compositions and thicknesses of the films. Compounds were identified by X-ray and electron diffraction. Sheet resistance was measured by the four probe technique and surface topography inspected by scanning electron microscopy.The silicide thickness achieved depends only on annealing time for power densities in the range of 20 to 50Wcm−2 and hence is independent of heating rate and peak temperature during the heating cycle.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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