Characterization of triazine derivatives on silicon wafers studied by photoelectron spectroscopy (XPS, UPS) and metastable impact electron spectroscopy (MIES)

1996 ◽  
Vol 103 (3) ◽  
pp. 221-229 ◽  
Author(s):  
S. Dieckhoff ◽  
V. Schlett ◽  
W. Possart ◽  
O.-D. Hennemann ◽  
J. Günster ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Silicon Wafers ◽  
Triazine Derivatives

New approach in the monitoring and characterization of titanium nitride thin films

1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ex Situ ◽  
New Approach ◽  
X Ray ◽  
Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

Characterization of thin Chemical/Native Oxides on Si (100) by Auger and Angle-Resolved XPS

1993 ◽  
Vol 318 ◽  
Author(s):  
Eddie D. Pylant ◽  
Carolyn F. Hoener ◽  
Mark F. Arendt ◽  
Bob Witowski
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Depth Distribution ◽  
Oxidation States ◽  
State Distribution ◽  
X Ray ◽  
Depth Profiles ◽  
Native Oxides ◽  
Target Factor Analysis

ABSTRACTChemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.

In situ X-ray photoelectron and Auger electron spectroscopic characterization of reaction mechanisms during Li-ion cycling

2016 ◽  
Vol 52 (90) ◽  
pp. 13257-13260 ◽  
Author(s):  
Ching-Yen Tang ◽  
Richard T. Haasch ◽  
Shen J. Dillon
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reaction Mechanisms ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopic Characterization ◽  
X Ray ◽  
Li Ion ◽  
Novel Design

We demonstrate a novel design for in situ X-ray photoelectron spectroscopy and in situ Auger electron spectroscopy, and we applied this technique to characterize the evolution of bonding and chemistry during cycling of nanoparticle electrodes.

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