Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

MRS Proceedings ◽

10.1557/opl.2012.867 ◽

2012 ◽

Vol 1426 ◽

pp. 331-337

Author(s):

Hiroshi Noge ◽

Akira Okada ◽

Ta-Ko Chuang ◽

J. Greg Couillard ◽

Michio Kondo

Keyword(s):

Epitaxial Growth ◽

Heating Temperature ◽

Exothermic Reaction ◽

Epitaxial Films ◽

Si Substrates ◽

Glass Substrates ◽

Good Crystallinity ◽

Crystalline Films ◽

Si Films ◽

First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

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Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

MRS Proceedings ◽

10.1557/opl.2015.828 ◽

2015 ◽

Vol 1770 ◽

pp. 67-72

Author(s):

Vernon K. Wong ◽

A. M. Chitu ◽

A. B. Limanov ◽

James S. Im

Keyword(s):

Epitaxial Growth ◽

Growth Model ◽

Crystal Nucleation ◽

Key Factors ◽

Complete Melting ◽

Melting Regime ◽

Direct Growth ◽

Crystal Core ◽

Excimer Laser Irradiation ◽

Si Films

ABSTRACTWe have investigated the solidified microstructure of nucleation-generated grains obtained via complete melting of Si films on SiO2 at high nucleation temperatures. This was achieved using a high-temperature-capable hot stage in conjunction with excimer laser irradiation. As predicted by the direct-growth model that considers (1) the evolution in the temperature of the solidifying interface and (2) the subsequent modes of growth (consisting of amorphous, defective, and epitaxial) as key factors, we were able to observe the appearance of “normal” grains that possess a single-crystal core area. These grains, which are in contrast to previously reported flower-shaped grains that fully make up the microstructure of the solidified films obtained via irradiation at lower preheating temperatures (and amongst which these “normal” grains emerge), indicate that epitaxial growth of nucleated crystals must have taken place within the grains. We discuss the implications of our findings regarding (1) the validity of the direct-growth model, (2) the nature of the heterogeneous nucleation mechanism, and (3) the alternative explanations and assumptions that have been previously employed in order to explain the microstructure of Si films obtained via nucleation and growth within the complete melting regime.

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Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

Applied Physics Letters ◽

10.1063/1.95653 ◽

1985 ◽

Vol 46 (3) ◽

pp. 268-270 ◽

Cited By ~ 33

Author(s):

Hiroshi Yamamoto ◽

Hiroshi Ishiwara ◽

Seijiro Furukawa

Keyword(s):

Epitaxial Growth ◽

Solid Phase ◽

Amorphous Si ◽

Si Films

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Monocrystalline Si Films from Transfer Processes for Thin Film Devices

MRS Proceedings ◽

10.1557/proc-685-d2.1.1 ◽

2001 ◽

Vol 685 ◽

Cited By ~ 3

Author(s):

Ralf B. Bergmann ◽

Christopher Berge ◽

Titus J. Rinke ◽

Jürgen H. Werner

Keyword(s):

Thin Film ◽

Epitaxial Growth ◽

Defect Density ◽

Silicon On Insulator ◽

Active Matrix ◽

Plastic Substrates ◽

Light Point ◽

Single Host ◽

Active Matrix Displays ◽

Si Films

AbstractThe transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation ofquasi-monocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

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