Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

1985 ◽  
Vol 53 ◽  
Author(s):  
Henry I. Smith ◽  
M. W. Geis ◽  
C. V. Thompson ◽  
C. K. Chen
Keyword(s):  
Low Temperature ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Grain Growth ◽  
High Temperatures ◽  
Zone Melting ◽  
Si Substrates ◽  
Crystalline Films ◽  
Amorphous Substrates ◽  
Si Films

ABSTRACTTwo approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method

2006 ◽  
Vol 11-12 ◽  
pp. 261-264 ◽  
Author(s):  
Kazuki Takahashi ◽  
Kanji Yasui ◽  
Maki Suemitsu ◽  
Ariyuki Kato ◽  
Yuichiro Kuroki ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Epitaxial Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Step Growth ◽  
Substrate Temperatures

Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

CVD Growth of SiC on Ultrathin SOi2: A Step Towards Development of a Compliant Substrate for SiC and III-V Compounds

1995 ◽  
Vol 410 ◽  
Author(s):  
Freydoon Namavar ◽  
P. Colter ◽  
A. Cremins-Costa ◽  
E. Gagnon ◽  
D. Perry
Keyword(s):  
Epitaxial Growth ◽  
Growth Conditions ◽  
Auger Spectroscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Compliant Substrate ◽  
Si Substrates ◽  
Initial Stage ◽  
Cvd Growth ◽  
Si Films

ABSTRACTThis paper addresses the initial stage of epitaxial growth of SiC on thin (about 300A) and thick (2000Å) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates

2006 ◽  
Vol 28 (6-7) ◽  
pp. 855-858 ◽  
Author(s):  
H. Isshiki ◽  
K. Masaki ◽  
K. Ueda ◽  
K. Tateishi ◽  
T. Kimura
Keyword(s):  
Epitaxial Growth ◽  
Si Substrates ◽  
Crystalline Films

Mocvd Growth Of Single Crystal Znsxsel−x On Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Patricia A. Sekula ◽  
Stanley M. Vernon ◽  
Chris J. Keavney
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Silicon Solar Cells ◽  
Antireflective Coatings ◽  
Si Substrates ◽  
Mocvd Growth ◽  
Low Pressure Mocvd ◽  
First Time

ABSTRACTSingle crystal ZnSxSel−x films have been grown for the first time on (111) Si substrates by low-pressure MOCVD. The epitaxial films clearly show a passivating effect on silicon solar cells, and act as antireflective coatings. Attempts at incorporating Al as an n-type dopant were unsuccessful as the films remain semi-insulating.

Solvent-Free Powder Synthesis and MOF-CVD Thin Films of the Mesoporous Metal-Organic Framework MAF-6

2019 ◽  
Author(s):  
Timothée Stassin ◽  
Ivo Stassen ◽  
Joao Marreiros ◽  
Alexander John Cruz ◽  
Rhea Verbeke ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metal Organic Framework ◽  
Chemical Vapor ◽  
Uptake Capacity ◽  
Powder Synthesis ◽  
Crystalline Films ◽  
Metal Organic ◽  
Mesoporous Metal ◽  
First Time ◽  
Organic Framework

A simple solvent- and catalyst-free method is presented for the synthesis of the mesoporous metal-organic framework (MOF) MAF-6 (RHO-Zn(eIm)2) based on the reaction of ZnO with 2-ethylimidazole vapor at temperatures ≤ 100 °C. By translating this method to a chemical vapor deposition (CVD) protocol, mesoporous crystalline films could be deposited for the first time entirely from the vapor phase. A combination of PALS and Kr physisorption measurements confirmed the porosity of these MOF-CVD films and the size of the MAF-6 supercages (diam. ~2 nm), in close agreement with powder data and calculations. MAF-6 powders and films were further characterized by XRD, TGA, SEM, FTIR, PDF and EXAFS. The exceptional uptake capacity of the mesoporous MAF-6 in comparison to the microporous ZIF-8 is demonstrated by vapor-phase loading of a molecule larger than the ZIF-8 windows.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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