scholarly journals Effect of growth conditions on the efficiency of cell disruption of Neochloris oleoabundans

2020 ◽  
Vol 300 ◽  
pp. 122699 ◽  
Author(s):  
C. Safi ◽  
G. Olivieri ◽  
N. Engelen-Smit ◽  
W. Spekking ◽  
R. Veloo ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Cell Disruption ◽  
Neochloris Oleoabundans

Effects of organism type and growth conditions on cell disruption by impingement

1981 ◽  
Vol 3 (2) ◽  
pp. 83-88 ◽  
Author(s):  
C. R. Engler ◽  
C. W. Robinson
Keyword(s):  
Growth Conditions ◽  
Cell Disruption

scholarly journals Neochloris oleoabundans from nature to industry: a comprehensive review

2021 ◽  
Author(s):  
Carl Safi ◽  
Antonino Pollio ◽  
Giuseppe Olivieri
Keyword(s):  
Value Chain ◽  
Cell Disruption ◽  
Neochloris Oleoabundans ◽  
Historical Overview ◽  
Comprehensive Review ◽  
Unit Operations ◽  
Multiple Cell ◽  
Production Conditions

AbstractMicroalgae technology has been extensively studied during the last two decades. Thousands of species were isolated, and few are currently used in the market for multiple purposes. The current comprehensive review focuses on a promising species named Neochloris oleoabundans. It encompasses a historical overview of the species followed by a detailed description of its taxonomy, ecophysiology and morphology. Furthermore, a thorough screening is conducted to outline the production conditions employed to grow the microalga. In addition, multiple cell disruption and fractionation methods previously applied on N. oleoabundans are described and discussed together with the value chain creation after applying all the unit operations.

scholarly journals Combined Enzymatic and Mechanical Cell Disruption and Lipid Extraction of Green Alga Neochloris oleoabundans

2015 ◽  
Vol 16 (12) ◽  
pp. 7707-7722 ◽  
Author(s):  
Dongqin Wang ◽  
Yanqun Li ◽  
Xueqiong Hu ◽  
Weimin Su ◽  
Min Zhong
Keyword(s):  
Green Alga ◽  
Lipid Extraction ◽  
Cell Disruption ◽  
Neochloris Oleoabundans

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

The value of Electron Microscope studies of imperfect natural diamonds

1990 ◽  
Vol 48 (4) ◽  
pp. 194-195
Author(s):  
J C Walmsley ◽  
A R Lang
Keyword(s):  
Electron Microscope ◽  
Classification Scheme ◽  
Natural Diamond ◽  
Sudden Change ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Major Constituent ◽  
Natural Diamonds ◽  
Type Ia ◽  
Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

Role of the exosporial membrane in attachment and germination of C. sporogenes

1993 ◽  
Vol 51 ◽  
pp. 38-39
Author(s):  
B.J. Panessa-Warren ◽  
G.T. Tortora ◽  
J.B. Warren
Keyword(s):  
Enzymatic Degradation ◽  
Light Transmission ◽  
Extended Period ◽  
Growth Conditions ◽  
Clostridium Sporogenes ◽  
Radiation Chemical ◽  
Physical Trauma ◽  
Extended Contact ◽  
Cold Pressure

Some bacteria are capable of forming highly resistant spores when environmental conditions are not adequate for growth. Depending on the genus and species of the bacterium, these endospores are resistant in varying degrees to heat, cold, pressure, enzymatic degradation, ionizing radiation, chemical sterilants,physical trauma and organic solvents. The genus Clostridium, responsible for botulism poisoning, tetanus, gas gangrene and diarrhea in man, produces endospores which are highly resistant. Although some sporocides can kill Clostridial spores, the spores require extended contact with a sporocidal agent to achieve spore death. In most clinical situations, this extended period of treatment is not possible nor practical. This investigation examines Clostridium sporogenes endospores by light, transmission and scanning electron microscopy under various dormant and growth conditions, cataloging each stage in the germination and outgrowth process, and analyzing the role played by the exosporial membrane in the attachment and germination of the spore.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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