The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 – containing atmosphere

Carbon ◽  
2011 ◽  
Vol 49 (2) ◽  
pp. 732-736 ◽  
Author(s):  
Jian Sui ◽  
Jinjun Lu
2017 ◽  
Vol 897 ◽  
pp. 99-102 ◽  
Author(s):  
Kohei Shioda ◽  
Hitoshi Habuka ◽  
Hideki Ito ◽  
Shinichi Mitani ◽  
Yoshinao Takahashi

In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not give a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible


2015 ◽  
Vol 48 (6) ◽  
pp. 104-109
Author(s):  
Youn-Joon Baik ◽  
Do-Hyun Kwon ◽  
Jong-Keuk Park ◽  
Wook-Seong Lee

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  

2017 ◽  
Vol 409 ◽  
pp. 261-269 ◽  
Author(s):  
Ai-Min Wu ◽  
Chen-Chen Feng ◽  
Hao Huang ◽  
Ramon Alberto Paredes Camacho ◽  
Song Gao ◽  
...  

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