Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

A series of oxygen-deficient tin oxide thin films were deposited by radio frequency magnetron sputtering a sintered tin oxide ceramic target under pure argon atmosphere at different sputtering powers (80-160 w) under the based pressure of no more than 2.0×10-4 Pa, sputtering pressure of 2.0 Pa and deposition time of 20 min. It was revealed that all the as-deposited films were oxygen-deficient tin oxide films, and the main defect in films was oxygen vacancy (VO), whose concentration gradually decreased with the increase of sputtering power. The films prepared at a power of no more than 120 w were amorphous, and as the sputtering power increased to 140 and 160 w, the deposited thin films exhibited polycrystalline characteristics with (110), (101) and (211) diffraction peaks of tin oxide. The grain size, deposition rate as well as thickness of the obtained films rose up with increasing sputtering power. In addition, as the sputtering power raised, the electrical resistivity of the films increased, due to the electron conducting mechanism controlled by VO in the samples.

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Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3319 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3319-3323 ◽

Cited By ~ 39

Author(s):

Takahiro Hiramatsu ◽

Mamoru Furuta ◽

Hiroshi Furuta ◽

Tokiyoshi Matsuda ◽

Takashi Hirao

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Oxide Films ◽

Rf Magnetron Sputtering ◽

Zinc Oxide Films

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Structural studies of zinc oxide films grown by RF magnetron sputtering

Synthetic Metals ◽

10.1016/j.synthmet.2004.09.006 ◽

2005 ◽

Vol 148 (1) ◽

pp. 37-41 ◽

Cited By ~ 16

Author(s):

I. Sayago ◽

M. Aleixandre ◽

A. Martínez ◽

M.J. Fernández ◽

J.P. Santos ◽

...

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Oxide Films ◽

Rf Magnetron Sputtering ◽

Structural Studies ◽

Zinc Oxide Films

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GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING

Jurnal Teknologi ◽

10.11113/jt.v75.5169 ◽

2015 ◽

Vol 75 (7) ◽

Author(s):

Farah Lyana Shain ◽

Azmizam Manie @ Mani ◽

Lam Mui Li ◽

Saafie Salleh ◽

Afishah Alias ◽

...

Keyword(s):

Magnetron Sputtering ◽

Film Thickness ◽

Glass Substrate ◽

Deposition Time ◽

Growth Characteristic ◽

Rf Magnetron Sputtering ◽

Optical Transmittance ◽

Rf Power ◽

Argon Flow ◽

Sputtering Power

This paper investigate the dependence of film thickness onto characteristic of Gallium doped Zinc Oxide (GZO). GZO films were deposited on a glass substrate by RF Magnetron Sputtering using GZO ceramic target with 99.99% purity. Thicknesses were altered by varying the deposition time from 10 min to 50 min meanwhile the sputtering power, argon flow and target distance were fixed in order to investigate the influence of film thickness to the growth characteristic, structural, optical properties and surface morphology of the films. Sputtering was performed with RF power of 100 watt and the argon flow was set at 10 sccm. GZO thin films on various thicknesses range from 130 nm to 460 nm were successfully deposited onto glass substrate with the crystallite grain size in range of 20.63 nm to 22.04 nm with the optical transmittance above 85 %.

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