Enhanced dielectric constant and breakdown strength in dielectric composites using TiO2@HfO2 nanowires with gradient dielectric constant

2022 ◽  
Author(s):  
Yuan Liu ◽  
Weiwei Liu ◽  
Yang Zhou ◽  
Jingbo Chen ◽  
Zhiguo Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Breakdown Strength

Ultrahigh Energy Storage Performances of Polymer-based Nanocomposite via Interfaces Engneering

2020 ◽  
Author(s):  
Peng Wang ◽  
Zhongbin Pan ◽  
Weilin Wang ◽  
Jianxu Hu ◽  
Jinjun Liu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Energy Storage ◽  
High Performance ◽  
Breakdown Strength ◽  
Composite Films ◽  
Power Electronic ◽  
Ultrahigh Energy

High-performance electrostatic capacitors are in urgent demand owing to the rapidly development of advanced power electronic applications. However, polymer-based composite films with both high breakdown strength (Eb) and dielectric constant...

Enhanced dielectric properties and thermostability in polyimide composites with core-shell structured polyimide@BaTiO3 nanoparticles

2021 ◽  
pp. 095400832199352
Author(s):  
Wei Deng ◽  
Guanguan Ren ◽  
Wenqi Wang ◽  
Weiwei Cui ◽  
Wenjun Luo
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Energy Density ◽  
Breakdown Strength ◽  
In Situ Polymerization ◽  
Dielectric Materials ◽  
High Energy ◽  
Amic Acid ◽  
High Energy Density ◽  
Core Shell

Polymer composites with high dielectric constant and thermal stability have shown great potential applications in the fields relating to the energy storage. Herein, core-shell structured polyimide@BaTiO3 (PI@BT) nanoparticles were fabricated via in-situ polymerization of poly(amic acid) (PAA) and the following thermal imidization, then utilized as fillers to prepare PI composites. Increased dielectric constant with suppressed dielectric loss, and enhanced energy density as well as heat resistance were simultaneously realized due to the presence of PI shell between BT nanoparticles and PI matrix. The dielectric constant of PI@BT/PI composites with 55 wt% fillers increased to 15.0 at 100 Hz, while the dielectric loss kept at low value of 0.0034, companied by a high energy density of 1.32 J·cm−3, which was 2.09 times higher than the pristine PI. Moreover, the temperature at 10 wt% weight loss reached 619°C, demonstrating the excellent thermostability of PI@BT/PI composites. In addition, PI@BT/PI composites exhibited improved breakdown strength and toughness as compared with the BT/PI composites due to the well dispersion of PI@BT nanofillers and the improved interfacial interactions between nanofillers and polymer matrix. These results provide useful information for the structural design of high-temperature dielectric materials.

Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics

2012 ◽  
Vol 2012 (1) ◽  
pp. 000609-000616
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Power Electronics ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Dielectric Strength ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Ceramic Film ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

Preparation and Dielectric Property of Al2O3 Surface Coating Modified BaTiO3/Polyimide Composite Film

2014 ◽  
Vol 908 ◽  
pp. 63-66
Author(s):  
Ya Jun Wang ◽  
Xiao Juan Wu ◽  
Chang Gen Feng
Keyword(s):  
Dielectric Constant ◽  
Barium Titanate ◽  
Composite Film ◽  
Breakdown Strength ◽  
In Situ Polymerization ◽  
Chemical Properties ◽  
Dielectric Strength ◽  
Xrd Analysis ◽  
Nanocomposite Films ◽  
The Matrix

Polyimide (PI) was chosen as the matrix of the composite, barium titanate/polyimide (BT/PI) nanocomposite films were prepared by in situ polymerization. In order to improve the dispersion and the physical-chemical properties of BT surface, barium titanate was modified by Al2O3coating and modified BT/PI nanocomposite films were prepared. The prepared modified BT was characterized by X-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM), and the dielectric properties of the composites were characterized in detail. It was shown that surface modification with Al2O3is the chemical process and there were new substances forming. When BT was modified by 10 wt% Al2O3, the dielectric constant of the composite film was 18.96 (103Hz), the loss tangent 0.005, breakdown strength 70 MV·m-1, energy storage density 0.41 J·cm-3. The dielectric constant of BT modified by Al2O3is decreased while the dielectric strength of the modified BT/PI composite film is increased.

scholarly journals Crystallization and Dielectric Properties of MWCNT /Poly(1-Butene) Composite Films by a Solution Casting Method

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 755
Author(s):  
Lingfei Li ◽  
Qiu Sun ◽  
Xiangqun Chen ◽  
Yongjun Xu ◽  
Zhaohua Jiang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Breakdown Strength ◽  
Composite Films ◽  
Conductive Filler ◽  
Interfacial Polarization ◽  
Solution Casting ◽  
Casting Method ◽  
Solution Casting Method

In this work, poly(1-butene) (PB-1) composite films with multi-walled carbon nanotubes (MWCNT) were prepared by a solution casting method. The relationship between the dielectric properties and the crystal transformation process of the films was investigated. It was indicated that there were two crystal forms of I and II of PB-1 during the solution crystallization process. With the prolongation of the phase transition time, form II was converted into form I. The addition of the conductive filler (MWCNT) accelerated the rate of phase transformation and changed the nucleation mode of PB-1. The presence of crystal form I in the system increased the breakdown strength and the dielectric constant of the films and reduced the dielectric loss, with better stability. In addition, the dielectric constant and the dielectric loss of the MWCNT/PB-1 composite films increased with the addition of MWCNT, due to the interfacial polarization between MWCNT and PB-1 matrix. When the mass fraction of the MWCNT was 1.0%, the composite film had a dielectric constant of 43.9 at 25 °C and 103 Hz, which was 20 times that of the original film.

scholarly journals The investigation of electrical properties and microstructure of ZnO-doped Ba0.9Sr0.1TiO3 ceramics

2017 ◽  
Vol 07 (01) ◽  
pp. 1750007 ◽  
Author(s):  
Gang Liu ◽  
Wentao Jiang ◽  
Jingyong Jiao ◽  
Li Liu ◽  
Ziyang Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Properties ◽  
Solid State ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Xrd Analysis ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Electrical Breakdown Strength

Ba[Formula: see text]Sr[Formula: see text]TiO3 ceramics with or without ZnO have been prepared by traditional solid state reaction method. The XRD analysis showed that the doped Zn[Formula: see text] ions diffused into the BST crystal lattice, resulting in the variation of dielectric properties. Especially the dielectric constant at Curie point decreased with doping ZnO content when it is lower than 0.5[Formula: see text]mol%. Due to the promotion of sintering, doping ZnO can enhance the density of ceramics but increase grain size. However, ZnO is a kind of semiconductor and can lead to the decrease in electrical breakdown strength value.

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