Crystallization of hexagonal boron nitride exhibiting excitonic luminescence in the deep ultraviolet region at room temperature via thermal chemical vapor phase deposition

2010 ◽  
Vol 19 (1) ◽  
pp. 83-90 ◽  
Author(s):  
Osamu Tsuda ◽  
Kenji Watanabe ◽  
Takashi Taniguchi
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Ultraviolet Region ◽  
Vapor Phase Deposition ◽  
Deep Ultraviolet ◽  
Excitonic Luminescence

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Growth of epitaxial sodium-bismuth-titanate films by metal-organic chemical vapor phase deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 239-244 ◽  
Author(s):  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
A. Duk ◽  
A. Kwasniewski ◽  
S. Bin Anooz ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Bismuth Titanate ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sodium Bismuth Titanate ◽  
Vapor Phase Deposition ◽  
Metal Organic

scholarly journals Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

Chemical vapor deposition of boron nitride using premixed borontrichloride and ammonia

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Elevated Temperatures ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Deposit Formation ◽  
Deposition Zone ◽  
Single Tube ◽  
N Compounds

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

2018 ◽  
Vol 482 ◽  
pp. 1-8 ◽  
Author(s):  
Xu Yang ◽  
Shugo Nitta ◽  
Kentaro Nagamatsu ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Pulsed Mode
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