Improvement of material removal rate of single-crystal diamond by polishing using H2O2 solution

2016 ◽  
Vol 70 ◽  
pp. 39-45 ◽  
Author(s):  
Akihisa Kubota ◽  
Shin Nagae ◽  
Mutsumi Touge
Keyword(s):  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Single Crystal Diamond ◽  
H2o2 Solution

Effect of Polishing Time and Pressure on Polishing Pad Performance

2008 ◽  
Vol 389-390 ◽  
pp. 510-514
Author(s):  
A.Q. Biddut ◽  
Liang Chi Zhang ◽  
Y.M. Ali
Keyword(s):  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Critical Limit ◽  
Polishing Pads ◽  
Required Quality ◽  
Effective Life

This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a higher pressure, 25 kPa, deterioration is slower, and the effective life of pads and MRR is enhanced.

Grindability of Single Crystal Sapphire in Medical Use and the Scheme of Forming Highly Precise Spherical Heads

2011 ◽  
Vol 496 ◽  
pp. 13-18
Author(s):  
Otar Mgaloblishvili ◽  
Rauli Turmanidze ◽  
David Butskhrikidze ◽  
Mariam Beridze
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Precision Grinding ◽  
Hip Joints ◽  
Grinding Conditions ◽  
Single Crystal Sapphire

The scale of influence of the single crystal sapphire crystallographic plane orientation and grinding conditions on the material removal rate, surface finish and the state of sub-surface layer have been studied under Low-Temperature Precision Grinding (LPG). The schemes of forming partial spherical heads for human hip joints endoprostheses are considered and elaborated. The possible versions of forming the spherical heads of endoprosthesis based on the novelties in kinematics and the mode of material removal are discussed.

Effect of Abrasives on the Lapping Performance of 6H-SiC Single Crystal Wafer

2013 ◽  
Vol 690-693 ◽  
pp. 2179-2184 ◽  
Author(s):  
Wei Li ◽  
Qiu Sheng Yan ◽  
Jia Bin Lu ◽  
Ji Sheng Pan
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
High Efficiency ◽  
Removal Rate ◽  
Lower Surface ◽  
Crystal Wafer ◽  
Sic Wafer

In order to remove the cutting marks on the cutting surface of 6H-SiC single crystal wafer, experiments were conducted to investigate the effect of the abrasive characteristics (types, grain size, concentration and mixed abrasives) on the lapping performance of 6H-SiC single crystal wafer, then the removal mechanism of the abrasive grains in the lapping process was studied. Results indicate that the abrasives with larger grain size and higher hardness can result in a higher material removal rate while the abrasives with smaller grain size and lower hardness can achieve a lower surface roughness value. When the concentration of the abrasives is 7.69 wt%, a good lapping effect was obtained. Lower surface roughness value Ra can be obtained with a high material removal rate by using certain proportion mixed abrasives. Selecting appropriate abrasives can obtain a high surface quality of 6H-SiC wafer with a high efficiency.

Anisotropic Lapping of Single Crystal Sapphire

2010 ◽  
Vol 102-104 ◽  
pp. 502-505
Author(s):  
Ping Zhou ◽  
Peng Fei Gao ◽  
Wei Fang Wang ◽  
Dong Hui Wen
Keyword(s):  
Fracture Toughness ◽  
Surface Roughness ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Orientation ◽  
Experimental Results ◽  
Single Crystal Sapphire

Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.

scholarly journals Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2022 ◽  
Author(s):  
Yong Hu ◽  
Dong Shi ◽  
Ye Hu ◽  
Hongwei Zhao ◽  
Xingdong Sun
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Generation ◽  
Ultrasonic Assisted ◽  
Single Crystal Sic ◽  
Sic Wafer

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

Effects of Process Parameters on Surface Roughness and MRR in the hard turning of EN 36 steel

2018 ◽  
pp. 102-110
Author(s):  
Amritpal Singh ◽  
Rakesh Kumar
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Material Removal ◽  
Hard Turning ◽  
Control Parameter ◽  
Removal Rate ◽  
Cutting Speed ◽  
Depth Of Cut ◽  
Cutting Condition ◽  
Dry Cutting

In the present study, Experimental investigation of the effects of various cutting parameters on the response parameters in the hard turning of EN36 steel under the dry cutting condition is done. The input control parameters selected for the present work was the cutting speed, feed and depth of cut. The objective of the present work is to minimize the surface roughness to obtain better surface finish and maximization of material removal rate for better productivity. The design of experiments was done with the help of Taguchi L9 orthogonal array. Analysis of variance (ANOVA) was used to find out the significance of the input parameters on the response parameters. Percentage contribution for each control parameter was calculated using ANOVA with 95 % confidence value. From results, it was observed that feed is the most significant factor for surface roughness and the depth of cut is the most significant control parameter for Material removal rate.

Performance Analysis of Trihexyltetradecylphosphonium Chloride Ionic Fluid under MQL Condition in Hard turning

2020 ◽  
Vol 17 (1) ◽  
pp. 7629-7647
Author(s):  
A. Pandey ◽  
R. Kumar ◽  
A. K. Sahoo ◽  
A. Paul ◽  
A. Panda
Keyword(s):  
Material Removal Rate ◽  
Feed Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Cutting Speed ◽  
Coconut Oil ◽  
Chip Morphology ◽  
Weight Fraction ◽  
Cutting Fluid ◽  
Depth Of Cut

The current research presents an overall performance-based analysis of Trihexyltetradecylphosphonium Chloride [[CH3(CH2)5]P(Cl)(CH2)13CH3] ionic fluid mixed with organic coconut oil (OCO) during turning of hardened D2 steel. The application of cutting fluid on the cutting interface was performed through Minimum Quantity Lubrication (MQL) approach keeping an eye on the detrimental consequences of conventional flood cooling. PVD coated (TiN/TiCN/TiN) cermet tool was employed in the current experimental work. Taguchi’s L9 orthogonal array and TOPSIS are executed to analysis the influences, significance and optimum parameter settings for predefined process parameters. The prime objective of the current work is to analyze the influence of OCO based Trihexyltetradecylphosphonium Chloride ionic fluid on flank wear, surface roughness, material removal rate, and chip morphology. Better quality of finish (Ra = 0.2 to 1.82 µm) was found with 1% weight fraction but it is not sufficient to control the wear growth. Abrasion, chipping, groove wear, and catastrophic tool tip breakage are recognized as foremost tool failure mechanisms. The significance of responses have been studied with the help of probability plots, main effect plots, contour plots, and surface plots and the correlation between the input and output parameters have been analyzed using regression model. Feed rate and depth of cut are equally influenced (48.98%) the surface finish while cutting speed attributed the strongest influence (90.1%). The material removal rate is strongly prejudiced by cutting speed (69.39 %) followed by feed rate (28.94%) whereas chip reduction coefficient is strongly influenced through the depth of cut (63.4%) succeeded by feed (28.8%). TOPSIS significantly optimized the responses with 67.1 % gain in closeness coefficient.

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