scholarly journals Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2022 ◽  
Author(s):  
Yong Hu ◽  
Dong Shi ◽  
Ye Hu ◽  
Hongwei Zhao ◽  
Xingdong Sun
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Generation ◽  
Ultrasonic Assisted ◽  
Single Crystal Sic ◽  
Sic Wafer

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

Effect of Abrasives on the Lapping Performance of 6H-SiC Single Crystal Wafer

2013 ◽  
Vol 690-693 ◽  
pp. 2179-2184 ◽  
Author(s):  
Wei Li ◽  
Qiu Sheng Yan ◽  
Jia Bin Lu ◽  
Ji Sheng Pan
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
High Efficiency ◽  
Removal Rate ◽  
Lower Surface ◽  
Crystal Wafer ◽  
Sic Wafer

In order to remove the cutting marks on the cutting surface of 6H-SiC single crystal wafer, experiments were conducted to investigate the effect of the abrasive characteristics (types, grain size, concentration and mixed abrasives) on the lapping performance of 6H-SiC single crystal wafer, then the removal mechanism of the abrasive grains in the lapping process was studied. Results indicate that the abrasives with larger grain size and higher hardness can result in a higher material removal rate while the abrasives with smaller grain size and lower hardness can achieve a lower surface roughness value. When the concentration of the abrasives is 7.69 wt%, a good lapping effect was obtained. Lower surface roughness value Ra can be obtained with a high material removal rate by using certain proportion mixed abrasives. Selecting appropriate abrasives can obtain a high surface quality of 6H-SiC wafer with a high efficiency.

Consideration of Femtosecond Laser-Induced Effect on Semiconductor Material SiC Substrate for CMP Processing

2015 ◽  
Vol 799-800 ◽  
pp. 458-462
Author(s):  
Cheng Wu Wang ◽  
Syuhei Kurokawa ◽  
Toshiro Doi ◽  
Yasuhisa Sano ◽  
Hideo Aida ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Femtosecond Laser ◽  
Surface Morphology ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Lower Surface ◽  
Before And After ◽  
Single Crystal Sic ◽  
Sic Wafer

In this paper, lapped C-face of single crystal SiC wafer was irradiated by femtosecond laser. Chemical mechanical polishing (CMP) was then carried out to polish the irradiated SiC C-face. The authors compared the results of femtosecond laser-assisted CMP process. A white-light interferometer was used to investigate the surface morphology of the processed SiC substrate before and after laser irradiation. It was found that the material removal rate (MRR) of the irradiated substrate is about 3 times higher than that of the substrate not treated by femtosecond laser. In addition, lower surface roughness was realized after femtosecond laser assisted CMP process.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Principle and Experiment of Ultrasonic Subtle Atomization in CMP

2011 ◽  
Vol 279 ◽  
pp. 287-290 ◽  
Author(s):  
Xiao Peng Liu ◽  
Xiao Chun Chen ◽  
Qing Zhong Li
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental System ◽  
Mechanical Polishing

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

Preliminary Study on Highly Efficient Polishing of 4H-SiC by Utilization of Anodic Oxidation

2014 ◽  
Vol 1017 ◽  
pp. 509-514 ◽  
Author(s):  
Kazuya Yamamura ◽  
Kenji Hosoya ◽  
Yusuke Imanishi ◽  
Hui Deng ◽  
Katsuyoshi Endo
Keyword(s):  
Surface Roughness ◽  
Phosphoric Acid ◽  
Single Crystal ◽  
Anodic Oxidation ◽  
Chemical Mechanical Polishing ◽  
Oxidation Rate ◽  
Removal Rate ◽  
Experimental Results ◽  
Single Crystal Sic ◽  
Preliminary Study

Preliminary study on anodic-oxidation-assisted polishing (AOAP) of 4H-SiC (0001) using ceria polishing film was demonstrated. In the case of using deionized (DI) water as an electrolyte, rms roughness of 0.16 nm was obtained, which is almost the same as roughness of the surface finished by conventional chemical mechanical polishing (CMP). However, the polishing rate was very low and was 23 nm/h. In contrast, the polishing rate of 0.84 μm/h, which is equal to that of conventional CMP of single-crystal SiC or greater, was obtained when we used 1 wt% of phosphoric acid (H3PO4) as the electrolyte, although the surface roughness increased to rms roughness of 1 nm order. These experimental results indicate that the polishing rate greatly depends on the oxidation rate of anodic oxidation and the balance between the oxidation rate and the removal rate of oxide by abrasive greatly affects the roughness of the processed surface.

scholarly journals Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7320
Author(s):  
Dong Shi ◽  
Tianchen Zhao ◽  
Tengfei Ma ◽  
Jinping Pan
Keyword(s):  
Single Crystal ◽  
High Efficiency ◽  
Surface Defects ◽  
Removal Rate ◽  
Oxide Semiconductor ◽  
Hybrid Process ◽  
Ultrasonic Assisted ◽  
Single Crystal Sic ◽  
Surface Damages ◽  
Sic Wafer

Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. To improve the precise machinability of single-crystal SiC wafer, this paper proposed a new hybrid process. Firstly, we developed an ultrasonic vibration-assisted device, by which ultrasonic-assisted lapping and ultrasonic-assisted CMP (chemical mechanical polishing) for SiC wafer were fulfilled. Secondly, a novel three-step ultrasonic-assisted precise machining route was proposed. In the first step, ultrasonic lapping using a cast iron disc was conducted, which quickly removed large surface damages with a high MRR (material removal rate) of 10.93 μm/min. In the second step, ultrasonic lapping using a copper disc was conducted, which reduced the residual surface defects with a high MRR of 6.11 μm/min. In the third step, ultrasonic CMP using a polyurethane pad was conducted, which achieved a smooth and less damaged surface with an MRR of 1.44 μm/h. These results suggest that the ultrasonic-assisted hybrid process can improve the precise machinability of SiC, which will hopefully achieve high-efficiency and ultra-precision machining.

Anisotropic Lapping of Single Crystal Sapphire

2010 ◽  
Vol 102-104 ◽  
pp. 502-505
Author(s):  
Ping Zhou ◽  
Peng Fei Gao ◽  
Wei Fang Wang ◽  
Dong Hui Wen
Keyword(s):  
Fracture Toughness ◽  
Surface Roughness ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Orientation ◽  
Experimental Results ◽  
Single Crystal Sapphire

Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.

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