The Properties of Heavily Al-Doped ZnO Films by Simultaneous rc and dc Magnetron Sputtering

2006 ◽  
Vol 118 ◽  
pp. 305-310 ◽  
Author(s):  
Su Shia Lin ◽  
Jow Lay Huang
Keyword(s):  
Surface Roughness ◽  
High Resistivity ◽  
Zno Films ◽  
Al Content ◽  
Dc Power ◽  
Wide Range ◽  
Amorphous Structures ◽  
Doped Zno ◽  
Surface Morphologies ◽  
Frequency Power

A radio frequency power (rf) was supplied to ZnO target, and a direct current (dc) power was supplied to Al target for the preparation of heavily Al-doped ZnO (ZnO:Al) films. The advantage of this kind of deposited method is that the Al content could be changed in a wide range. The ZnO:Al films prepared at different dc powers showed different surface morphologies, and corresponded to the different surface roughness. The ZnO:Al films prepared at high dc powers showed the amorphous structures, and resulted in very high resistivity. The resistivity of ZnO:Al film prepared at dc power of 40W was lower (8.52×10-3 -cm). It was mainly due to the relatively higher mobility, which probably resulted from the relatively low surface roughness, and corresponded to the surface morphology in the shape of cobblestone. In addition, the ZnO:Al films prepared at different dc powers showed different optical properties.

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

Effect of DC Power on the Structural and the Electrical Properties of B-ion-doped ZnO Films

2009 ◽  
Vol 55 (1) ◽  
pp. 255-258 ◽  
Author(s):  
Christophe Avis ◽  
SeHwan Kim ◽  
JiHo Hur ◽  
Jin Jang ◽  
SungJun Hong
Keyword(s):  
Electrical Properties ◽  
Zno Films ◽  
Dc Power ◽  
Doped Zno

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

2012 ◽  
Vol 1494 ◽  
pp. 133-138 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Zno Film ◽  
Al Content ◽  
Heavily Doped ◽  
Doped Zno

ABSTRACTIn this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

scholarly journals Using Oxygen Plasma Pretreatment to Enhance the Properties of F-Doped ZnO Films Prepared on Polyimide Substrates

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1501 ◽  
Author(s):  
Chih-Cheng Chen ◽  
Fang-Hsing Wang ◽  
Sheng-Cheng Chang ◽  
Cheng-Fu Yang
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Zno Films ◽  
Plasma Pretreatment ◽  
Pretreatment Time ◽  
Doped Zno ◽  
Surface Morphologies ◽  
O2 Plasma

In this study, a radio frequency magnetron sputtering process was used to deposit F-doped ZnO (FZO) films on polyimide (PI) substrates. The thermal expansion effect of PI substrates induces distortion and bending, causing FZO films to peel and their electrical properties and crystallinity to deteriorate. To address these shortcomings, oxygen (O2) plasma was used to pretreat the surface of PI substrates using a plasma-enhanced chemical vapor deposition system before the FZO films were deposited. The effects of O2 plasma pretreatment time on the surface water contact angle, surface morphologies, and optical properties of the PI substrates were investigated. As the pretreatment time increased, so did the roughness of the PI substrates. After the FZO films had been deposited on the PI substrates, variations in the surface morphologies, crystalline structure, composition, electrical properties, and optical properties were investigated as a function of the O2 plasma pretreatment time. When this was 30 s, the FZO films had optimal optical and electrical properties. The resistivity was 3.153 × 10−3 Ω-cm, and the transmittance ratios of all films were greater than 90%. The X-ray photoelectron spectroscopy spectra of the FZO films, particularly the peaks for O1s, Zn 2p1/2, and Zn 2p3/2, were determined for films with O2 plasma pretreatment times of 0 and 30 s. Finally, a HCl solution was used to etch the surfaces of the deposited FZO films, and silicon-based thin-film solar cells were fabricated on the FZO/PI substrates. The effect of O2-plasma pretreatment time on the properties of the fabricated solar cells is thoroughly discussed.

Investigation of Aluminum Content on the Properties of Sol-Gel-Derived Zinc Oxide Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1173-1176
Author(s):  
Shu Wen Xue ◽  
Xiao Tao Zu
Keyword(s):  
Sol Gel ◽  
Optical Transmittance ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Al Content ◽  
Glass Substrates ◽  
Wide Range ◽  
Sol Gel Process

This paper reports that ZnO:Al films were deposited onto glass substrates by sol-gel process. Al/Zn atomic ratio varied in a wide range from 0 ~ 20%. The structural and optical properties were investigated by X-ray diffraction (XRD) and optical transmittance, respectively. X-ray photoemission spectroscopy (XPS) was used to investigate the elemental compositions. XRD results showed that ZnO films remained c-axis-orientated when Al/Zn atomic ratio was below 20% and the grain size decreased with increasing Al content. The optical transmittance showed that the optical bandgap of ZnO films blueshifted with increasing Al/Zn atomic ratio from 0-20%. XPS measurements showed that the binding energy of O1s increased with increasing Al content.

Surface Morphology of Transparent Conductive ZnO Film Grown by DC Sputtering Method

2014 ◽  
Vol 894 ◽  
pp. 403-407 ◽  
Author(s):  
Kenji Yoshino ◽  
Masaki Tanaka ◽  
Akiko Ide ◽  
Stuart A. Boden ◽  
Darren M. Bagnall ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Damage ◽  
High Energy ◽  
Zno Films ◽  
Structure Model ◽  
High Substrate ◽  
Dc Sputtering ◽  
Grain Sizes ◽  
Doped Zno ◽  
Substrate Temperatures

The growth of (0002) orientated polycrystalline undoped and Ga-doped ZnO films by DC sputtering under Ar is described. The (0002) peak intensity decreases with increasing substrate temperature in both doped and undoped samples. The average grain sizes are very small. This indicates that ZnO films with low crystallinity are obtained at high substrate temperatures. It is deduced that surface damage can be increased by high energy plasmas of neutral Ar particles at high substrate temperatures. The average surface roughness for both undoped and Ga-doped ZnO films decreases with increasing substrate temperatures. It is deduced that energies of sputter particles decrease with increasing substrate temperatures due to collisions with Ar particles. The surface roughness corresponds well to the structure model.

scholarly journals Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 446 ◽  
Author(s):  
Ya-Fen Wei ◽  
Wen-Yaw Chung ◽  
Cheng-Fu Yang ◽  
Jei-Ru Shen ◽  
Chih-Cheng Chen
Keyword(s):  
Hydrothermal Process ◽  
Zno Nanowires ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
The Eu

ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6H2O or In(NO3)2-6H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) at%. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

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