Fabrication and mechanical properties of tungsten carbide thin films via mist chemical vapor deposition

The present work studies the tungsten carbide (WC/C) coatings deposited by using Plasma Enhanced Chemical Vapor Deposition (PECVD), with and without gases of Ar and N2. Volatile hexacarbonyl of W was used as a precursor. Their mechanical and tribological properties were evaluated. The following values were obtained by using deposition process with N2 of HIT = 19.7 ± 4.1 GPa, EIT = 221 ± 2.1 GPa, and coefficient of friction (COF) = 0.35 ± 0.09. Secondly, deposition without the aforementioned gas obtained values of HIT = 20.9 ± 2 GPa, EIT = 292 ± 20 GPa, and COF = 0.69 ± 0.05. WC/C coatings were annealed at temperatures of 200, 500, and 800 °C, respectively. Evaluated factors include the introduced properties, the observed morphology, and the structural composition of WC/C coatings. The process of degradation was carried out by using various velocities, depending on used gases and annealing temperatures.

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Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

Physica B Condensed Matter ◽

10.1016/j.physb.2009.09.055 ◽

2010 ◽

Vol 405 (2) ◽

pp. 513-516 ◽

Cited By ~ 12

Author(s):

Kang-San Kim ◽

Ki-Bong Han ◽

Gwiy-Sang Chung

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Precursor

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ChemInform Abstract: Low-Pressure Chemical Vapor Deposition of Tungsten Carbide Thin Films

ChemInform ◽

10.1002/chin.199135285 ◽

2010 ◽

Vol 22 (35) ◽

pp. no-no

Author(s):

Z. XUE ◽

K. G. CAULTON ◽

M. H. CHISHOLM

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Mechanical properties of a-C:H and a-C:H/SiOx nanocomposite thin films prepared by ion-assisted plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(95)08202-6 ◽

1996 ◽

Vol 280 (1-2) ◽

pp. 204-210 ◽

Cited By ~ 17

Author(s):

Jung H. Lee ◽

Dong S. Kim ◽

Young H. Lee ◽

Bakhtier Farouk

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nanocomposite Thin Films

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Study of SiC’s Mechanical Property Variance Caused by Film Thickness

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.645-646.400 ◽

2015 ◽

Vol 645-646 ◽

pp. 400-404

Author(s):

Zong Lei Jiao ◽

Jian Zhu

Keyword(s):

Thin Film ◽

Thin Films ◽

Mechanical Properties ◽

Mechanical Property ◽

Chemical Vapor Deposition ◽

Elastic Modulus ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Indentation Load

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa

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