Effect of tunnel junction grown at different growth rates on the optical properties and improved efficiency of InGaP/GaAs double-junction solar cells

2020 ◽  
Vol 832 ◽  
pp. 154989
Author(s):  
Il-Wook Cho ◽  
Su Ho Park ◽  
Thi Thuy Nguyen ◽  
Yeongho Kim ◽  
Sang Jun Lee ◽  
...  
2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
Daxing Han ◽  
Lynn Gedvilas

Abstracta-Si:H intrinsic films and their solar cells were prepared by DC-PECVD with growth rates of 1, 3, and 10 Å/s. Raman, IR, and PL spectroscopies were used to study the i-layer properties in relation to the solar cell performance. Raman shows an identical TO mode for all the samples, which indicates the local silicon-bonding configuration does not change with the growth rate from 1 to 10 Å/s. IR results show that the hydrogen bonding configuration is monohydride (Si-H) dominated, and the hydrogen content obtained from the 630 cm-1 wagging mode is 12-14 at.%. Surprisingly, a very small absorption strength for the stretching 2000-2100 cm-1 mode was found for some samples deposited at the higher growth rates (3, 10 Å/s). For these same samples, the PL spectra exhibit a red shift. Both the IR and PL results might be related to the same microstructures formed at high growth rates. We found that although the properties of the i-layer varied as the growth rate increased from 1 to 10 Å/s, the performances of the cells were comparable (within about 4%).


2017 ◽  
Vol 9 (5) ◽  
pp. 05035-1-05035-6 ◽  
Author(s):  
G. I. Kopach ◽  
◽  
R. P. Mygushchenko ◽  
G. S. Khrypunov ◽  
A. I. Dobrozhan ◽  
...  

2021 ◽  
Author(s):  
Xianhao Zhao ◽  
Tianyu Tang ◽  
Quan Xie ◽  
like gao ◽  
Limin Lu ◽  
...  

The cesium lead halide perovskites are regarded as effective candidates for light-absorbing materials in solar cells, which have shown excellent performances in experiments such as promising energy conversion efficiency. In...


2021 ◽  
Vol 11 (4) ◽  
pp. 1657
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos

Titania (TiO2) is a key material used as an electron transport in dye-sensitized and halide perovskite solar cells due to its intrinsic n-type conductivity, visible transparency, low-toxicity, and abundance. Moreover, it exhibits pronounced photocatalytic properties in the ultra-violet part of the solar spectrum. However, its wide bandgap (around 3.2 eV) reduces its photocatalytic activity in the visible wavelengths’ region and electron transport ability. One of the most efficient strategies to simultaneously decrease its bandgap value and increase its n-type conductivity is doping with appropriate elements. Here, we have investigated using the density functional theory (DFT), as well as the influence of chromium (Cr), molybdenum (Mo), and tungsten (W) doping on the structural, electronic, and optical properties of TiO2. We find that doping with group 6 elements positively impacts the above-mentioned properties and should be considered an appropriate method for photocatalystic applications. In addition to the pronounced reduction in the bandgap values, we also predict the formation of energy states inside the forbidden gap, in all the cases. These states are highly desirable for photocatalytic applications as they induce low energy transitions, thus increasing the oxide’s absorption within the visible. Still, they can be detrimental to solar cells’ performance, as they constitute trap sites for photogenerated charge carriers.


2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.


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