Formation of zinc oxide micro-disks via layer-by-layer growth and growth mechanism of ZnO nanostructures

2005 ◽  
Vol 283 (3-4) ◽  
pp. 332-338 ◽  
Author(s):  
L.W. Yang ◽  
X.L. Wu ◽  
Y. Xiong ◽  
Y.M. Yang ◽  
G.S. Huang ◽  
...  
Author(s):  
Jie Chen ◽  
Jun Wang

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.


1993 ◽  
Vol 127 (1-4) ◽  
pp. 213-216 ◽  
Author(s):  
Toshinari Fujimori ◽  
Satoru Nagao ◽  
Hideki Gotoh

2008 ◽  
Vol 381-382 ◽  
pp. 529-532
Author(s):  
N.I. Plusnin ◽  
W.M. Il'yashenko ◽  
S.A. Kitan ◽  
S.V. Krylov

The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).


2022 ◽  
Vol 64 (1) ◽  
pp. 117
Author(s):  
А.А. Корякин ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Ш.Ш. Шарофидинов

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.


2011 ◽  
Vol 158 (1) ◽  
pp. E8 ◽  
Author(s):  
Chunbin Cao ◽  
Guoshun Zhang ◽  
Xueping Song ◽  
Zhaoqi Sun

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.


Sign in / Sign up

Export Citation Format

Share Document