Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBE

1993 ◽  
Vol 127 (1-4) ◽  
pp. 213-216 ◽  
Author(s):  
Toshinari Fujimori ◽  
Satoru Nagao ◽  
Hideki Gotoh
Keyword(s):  
Growth Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Gas Source ◽  
Gas Source Mbe

Initial Stage of Heteroepitaxial Growth of SiC on Si by Gas Source MBE Using Hydrocarbon Radicals

1993 ◽  
Vol 318 ◽  
Author(s):  
Takashi Fuyuki ◽  
Yoichiro Tarui ◽  
Tomoaki Hatayama ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam ◽  
High Energy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Homoepitaxial Growth ◽  
Gas Source ◽  
Initial Stage ◽  
Hydrocarbon Radicals ◽  
Gas Source Mbe

ABSTRACTHeteroepitaxial growth of 3C-SiC on Si in gas source molecular beam epitaxy ( GSMBE ) was carried out by a combination of carbonization of a Si surface and subsequent crystal growth on it using hydrocarbon radicals and Si2H6. The carbonization process and the initial stage of the subsequent growth during the intermittent supply of Si2H6 have been studied by a reflection high-energy electron diffraction (RHEED) observation. A Si surface was chemically converted to 3C-SiC at 750°C, and homoepitaxial growth on the carbonized layer could be obtained at 1000°C. Si atoms generated by thermal decomposition on a surface would react with hydrocarbon radicals, forming SiC through a layer by layer growth mode.

Synthesis and Characterization of Zn Oxide Hexagonal Nano-Pole Films on Quartz Glass Substrate

2009 ◽  
Vol 7 (1) ◽  
Author(s):  
Jie Chen ◽  
Jun Wang
Keyword(s):  
Growth Mechanism ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Sol Gel ◽  
Layer Growth ◽  
Layer By Layer ◽  
Quartz Glass Substrate ◽  
Wurtzite Phase ◽  
X Ray

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.

Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon

2008 ◽  
Vol 381-382 ◽  
pp. 529-532
Author(s):  
N.I. Plusnin ◽  
W.M. Il'yashenko ◽  
S.A. Kitan ◽  
S.V. Krylov
Keyword(s):  
Transition Metal ◽  
Growth Mechanism ◽  
Surface Relief ◽  
Resistivity Measurement ◽  
Thickness Measurement ◽  
Layer Growth ◽  
Layer By Layer ◽  
Monolayer Films ◽  
Plasmon Peak

The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).

Formation of zinc oxide micro-disks via layer-by-layer growth and growth mechanism of ZnO nanostructures

2005 ◽  
Vol 283 (3-4) ◽  
pp. 332-338 ◽  
Author(s):  
L.W. Yang ◽  
X.L. Wu ◽  
Y. Xiong ◽  
Y.M. Yang ◽  
G.S. Huang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Zno Nanostructures

scholarly journals Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)

2022 ◽  
Vol 64 (1) ◽  
pp. 117
Author(s):  
А.А. Корякин ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Ш.Ш. Шарофидинов
Keyword(s):  
Aluminum Nitride ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Nucleation Mechanism ◽  
Hydride Vapor Phase Epitaxy ◽  
Nitride Film ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
Hybrid Substrates

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire

1991 ◽  
Vol 237 ◽  
Author(s):  
Z. Sitar ◽  
L. S. Smith ◽  
M. J. Paisley ◽  
R. F. Davis
Keyword(s):  
Molecular Nitrogen ◽  
Three Dimensional ◽  
Plasma Source ◽  
Layer By Layer ◽  
Initial Growth ◽  
Interface Chemistry ◽  
Ecr Plasma ◽  
Gas Source ◽  
Nitride Formation ◽  
Gas Source Mbe

ABSTRACTThe morphology and interface chemistry occurring during the initial stages of growth of GaN and A1N layers has been obtained. Films were grown using gas source MBE equipment containing an ECR plasma source to activate molecular nitrogen. The experiments consisted of sequential depositions of about one monolayer thick films and XPS analysis. Evidence for silicon nitride formation on the SiC surface was obtained from the studies of both the Si oxidation states and the substrate peak intensity dependence on film thickness. The growth of GaN on sapphire appeared to occur via the Stranski-Krastanov mode, while the growth on SiC showed characteristics of three-dimensional growth. AlN grew in a layer-by-layer mode on both substrates.

Layer-by-Layer Growth Mechanism of TiO[sub 2] Nanotube Arrays

2011 ◽  
Vol 158 (1) ◽  
pp. E8 ◽  
Author(s):  
Chunbin Cao ◽  
Guoshun Zhang ◽  
Xueping Song ◽  
Zhaoqi Sun
Keyword(s):  
Growth Mechanism ◽  
Layer Growth ◽  
Nanotube Arrays ◽  
Layer By Layer

scholarly journals The Effect of V/III Ratio on Growth Mechanism of Gas Source MBE

2013 ◽  
Vol 26 (6) ◽  
pp. 446-450
Author(s):  
Sungkuk Choi ◽  
Jinyeop Yoo ◽  
Soohoon Jung ◽  
Wonbeom Chang ◽  
Jiho Chang
Keyword(s):  
Growth Mechanism ◽  
Gas Source ◽  
Gas Source Mbe

Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

2006 ◽  
Vol 21 (11) ◽  
pp. 2801-2809 ◽  
Author(s):  
C. Chen ◽  
M.C. Plante ◽  
C. Fradin ◽  
R.R. LaPierre
Keyword(s):  
Molecular Beam ◽  
Stacking Faults ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Flow ◽  
Gas Source ◽  
Constant Diameter ◽  
Step Flow Growth ◽  
Tapered Region

GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.

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