Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon

2008 ◽  
Vol 381-382 ◽  
pp. 529-532
Author(s):  
N.I. Plusnin ◽  
W.M. Il'yashenko ◽  
S.A. Kitan ◽  
S.V. Krylov
Keyword(s):  
Transition Metal ◽  
Growth Mechanism ◽  
Surface Relief ◽  
Resistivity Measurement ◽  
Thickness Measurement ◽  
Layer Growth ◽  
Layer By Layer ◽  
Monolayer Films ◽  
Plasmon Peak

The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).

Synthesis and Characterization of Zn Oxide Hexagonal Nano-Pole Films on Quartz Glass Substrate

2009 ◽  
Vol 7 (1) ◽  
Author(s):  
Jie Chen ◽  
Jun Wang
Keyword(s):  
Growth Mechanism ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Sol Gel ◽  
Layer Growth ◽  
Layer By Layer ◽  
Quartz Glass Substrate ◽  
Wurtzite Phase ◽  
X Ray

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.

Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBE

1993 ◽  
Vol 127 (1-4) ◽  
pp. 213-216 ◽  
Author(s):  
Toshinari Fujimori ◽  
Satoru Nagao ◽  
Hideki Gotoh
Keyword(s):  
Growth Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Gas Source ◽  
Gas Source Mbe

Energetics of AlN Epitaxial Wetting Layers on SiC (0001)

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Di Felice ◽  
J. E. Northrup ◽  
J. Neugebauer
Keyword(s):  
First Principles ◽  
Three Dimensional ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Charge Accumulation ◽  
Wetting Layer ◽  
Interface Charge ◽  
Wetting Layers

ABSTRACTWe present a first-principles characterization of the initial stages of formation of AlN films on c-plane SiC substrates. Studying the competition between two-dimensional films and three-dimensional islands as a function of Al and N abundances, we find that a two-dimensional film can wet the surface in N-rich conditions. Ordered layer-by-layer growth can proceed to some extent on this wetting layer, and is improved by the formation of an atomically mixed interface which eliminates interface charge accumulation. Our results indicate that the stable AlN films grow in the (0001) orientation on the Si-terminated SiC(0001) substrate.

Formation of zinc oxide micro-disks via layer-by-layer growth and growth mechanism of ZnO nanostructures

2005 ◽  
Vol 283 (3-4) ◽  
pp. 332-338 ◽  
Author(s):  
L.W. Yang ◽  
X.L. Wu ◽  
Y. Xiong ◽  
Y.M. Yang ◽  
G.S. Huang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Zno Nanostructures

scholarly journals Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Hao-Ting Chin ◽  
Mario Hofmann ◽  
Su-Yu Huang ◽  
Song-Fu Yao ◽  
Jian-Jhang Lee ◽  
...  
Keyword(s):  
Transition Metal ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Spectroscopic Characterization ◽  
Layer Growth ◽  
Environmental Stability ◽  
Layer By Layer ◽  
Lateral Extent ◽  
Crystal Interfaces ◽  
2D Crystals

AbstractWe here present a planarized solid-state chemical reaction that can produce transition metal monochalcogenide (TMMC) 2D crystals with large lateral extent and finely controllable thickness down to individual layers. The enhanced lateral diffusion of a gaseous reactant at the interface between a solid precursor and graphene was found to provide a universal route towards layered TMMCs of different compositions. A unique layer-by-layer growth mechanism yields atomically abrupt crystal interfaces and kinetically controllable thickness down to a single TMMC layer. Our approach stabilizes 2D crystals with commonly unattainable thermodynamic phases, such as β-Cu2S and γ-CuSe, and spectroscopic characterization reveals ultra-large phase transition depression and interesting electronic properties. The presented ability to produce large-scale 2D crystals with high environmental stability was applied to highly sensitive and fast optoelectronic sensors. Our approach extends the morphological, compositional, and thermodynamic complexity of 2D materials.

scholarly journals Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)

2022 ◽  
Vol 64 (1) ◽  
pp. 117
Author(s):  
А.А. Корякин ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Ш.Ш. Шарофидинов
Keyword(s):  
Aluminum Nitride ◽  
Growth Mechanism ◽  
Layer Growth ◽  
Nucleation Mechanism ◽  
Hydride Vapor Phase Epitaxy ◽  
Nitride Film ◽  
Layer By Layer ◽  
Initial Growth ◽  
Island Growth ◽  
Hybrid Substrates

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Ordered Thin Films of Perylenetetracarboxylicdianhydride-bisimide and bis-(N-alkyl)-Quinacridone Dyes

2000 ◽  
Vol 620 ◽  
Author(s):  
Andrew Back ◽  
Dana Alloway ◽  
Derck Schlettwein ◽  
Brook Schilling ◽  
J.-F. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Alkali Halides ◽  
Layer Growth ◽  
Ex Situ ◽  
Layer By Layer ◽  
Molecular Plane ◽  
Layered Growth ◽  
Tapping Mode Afm

ABSTRACTWe review here the recent characterization of vacuum deposited monolayer and multilayer thin films of two different perylenetetracarboxylic-dianydride-bisimides (Cn-PTCDI; n =4,5), quinacridone, and two new bis-(N-alkyl)-quinacridone dyes (DIQA and DEHQA) on single crystal alkali halides using a combination of in situ luminescence spectroscopies and ex situ tapping mode AFM. Flat lying monolayer structures are indicated for PTCDA on the (100) faces of NaCl, KCl and KBr, for C4-PTCDI on KCl, for C5-PTCDI on both KCl and KBr and for DIQA on both KCl and KBr. Coherent thin films, exhibiting layer-by-layer growth can be achieved for PTCDA on all substrates, for C4-PTCDI on KCl and for DIQA on both KBr and KCl. Both C4-PTCDI and DIQA appear to fulfill the requirements for dyes which exhibit layered growth with the molecular plane inclined at steep angles to the surface normal.

Layer-by-Layer Growth Mechanism of TiO[sub 2] Nanotube Arrays

2011 ◽  
Vol 158 (1) ◽  
pp. E8 ◽  
Author(s):  
Chunbin Cao ◽  
Guoshun Zhang ◽  
Xueping Song ◽  
Zhaoqi Sun
Keyword(s):  
Growth Mechanism ◽  
Layer Growth ◽  
Nanotube Arrays ◽  
Layer By Layer

Layer-by-layer characterization of cellulose Langmuir–Blodgett monolayer films

1999 ◽  
Vol 142 (1-4) ◽  
pp. 585-590 ◽  
Author(s):  
Shin-ichi Kimura ◽  
Hiroyuki Kusano ◽  
Masahiko Kitagawa ◽  
Hiroshi Kobayashi
Keyword(s):  
Layer By Layer ◽  
Monolayer Films ◽  
Langmuir Blodgett
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