In-situ TEM investigation of dislocation loop reaction and irradiation hardening in H2+-He+ dual-beam irradiated Mo

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

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In situ TEM measurements of the electrical properties of interface dislocations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131322 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1338-1339

Author(s):

F. M. Ross ◽

R. Hull ◽

D. Bahnck ◽

J. C. Bean ◽

L. J. Peticolas ◽

...

Keyword(s):

Electrical Properties ◽

Electronic Device ◽

In Situ Tem ◽

Device Performance ◽

Misfit Dislocations ◽

Electrical Characteristics ◽

Strained Layer ◽

Transmission Electron ◽

Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121685 ◽

1992 ◽

Vol 50 (1) ◽

pp. 256-257

Author(s):

Tai D. Nguyen ◽

Ronald Gronsky ◽

Jeffrey B. Kortright

Keyword(s):

Layered Structure ◽

Driving Force ◽

High Energy ◽

Superior Performance ◽

In Situ Tem ◽

Rayleigh Instability ◽

Practical Applications ◽

Transmission Electron ◽

Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

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In-situ TEM investigation of dislocation loop reaction and irradiation hardening in H2+-He+ dual-beam irradiated Mo

In situ TEM and multiscale study of dislocation loop formation in the vicinity of a grain boundary

In-situ TEM investigation of unfaulting behavior of Frank loops in FCC Pd during H2+ & He+dual-beam irradiation

The evolution of dislocation loop and its interaction with pre-existing dislocation in He+-irradiated molybdenum: in-situ TEM observation and molecular dynamics simulation

In-situ TEM observation and MD simulation of the reaction and transformation of loops in tungsten during H2+ & He+ dual-beam irradiation

Helium bubble nucleation and growth in alloy HT9 through the use of in situ TEM: Sequential he-implantation and heavy-ion irradiation versus dual-beam irradiation

In-situ TEM study and molecular dynamics simulation of dislocation loop evolution in FeCrAl alloys under Fe+ irradiation

Revealing the synergistic effects of sequential and simultaneous dual beam irradiations in tungsten via in-situ TEM

In situ TEM studies of irradiation effects for materials improvement

In situ TEM measurements of the electrical properties of interface dislocations

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

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