Doped Organic Charge-Transfer Cocrystal with tunable Fluorescence of Wide Band Emission

2021 ◽  
pp. 113727
Author(s):  
Pengfei Wu ◽  
Long Zhou ◽  
Zhaojian Zhen ◽  
Shuwei Xia ◽  
Liangmin Yu
Keyword(s):  
Charge Transfer ◽  
Wide Band ◽  
Band Emission

scholarly journals Charge-Transfer Induced by the Oxygen Vacancy Defects in the Ag/MoO3 Composite System

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1292
Author(s):  
Qi Chu ◽  
Jingmeng Li ◽  
Sila Jin ◽  
Shuang Guo ◽  
Eungyeong Park ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxygen Vacancy ◽  
Composite System ◽  
Wide Band ◽  
Utilization Rate ◽  
Wide Band Gap ◽  
Interesting Phenomenon ◽  
Vacancy Defects ◽  
Characterization Methods ◽  
Surface Enhanced Raman

In this paper, an Ag/MoO3 composite system was cosputtered by Ar plasma bombardment on a polystyrene (PS) colloidal microsphere array. The MoO3 formed by this method contained abundant oxygen vacancy defects, which provided a channel for charge transfer in the system and compensated for the wide band gap of MoO3. Various characterization methods strongly demonstrated the existence of oxygen vacancy defects and detected the properties of oxygen vacancies. 4-Aminothiophenol (p-aminothiophenol, PATP) was used as a candidate surface-enhanced Raman scattering (SERS) probe molecule to evaluate the contribution of the oxygen vacancy defects in the Ag/MoO3 composite system. Interestingly, oxygen vacancy defects are a kind of charge channel, and their powerful effect is fully reflected in their SERS spectra. Increasing the number of charge channels and increasing the utilization rate of the channels caused the frequency of SERS characteristic peaks to shift. This interesting phenomenon opens up a new horizon for the study of SERS in oxygen-containing semiconductors and provides a powerful reference for the study of PATP.

scholarly journals Realization of deep-blue TADF in sterically controlled naphthyridines for vacuum- and solution-processed OLEDs

2020 ◽  
Vol 8 (25) ◽  
pp. 8560-8566
Author(s):  
Gediminas Kreiza ◽  
Dovydas Banevičius ◽  
Justina Jovaišaitė ◽  
Saulius Juršėnas ◽  
Tomas Javorskis ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Narrow Band ◽  
Solution Processed ◽  
Band Emission ◽  
Deep Blue

Efficient deep-blue naphthyridine-based TADF emitters featuring narrow-band-emission with low roll-off were designed by using the H-bonding and sterically controlled charge-transfer interactions.

Impact of Ultra Wide Band emission on WiMAX systems at 2.5 and 3.5GHz

2010 ◽  
Vol 54 (10) ◽  
pp. 1573-1583 ◽  
Author(s):  
Bazil Taha Ahmed ◽  
Jose Luis Masa Campos ◽  
Jorge A. Ruiz-Cruz
Keyword(s):  
Wide Band ◽  
Ultra Wide Band ◽  
Band Emission

ZnO NANONEEDLES DEPOSITED ON CHEMICALLY ETCHED SILICON NANOWIRES VIA HYDROTHERMAL PROCESS

2013 ◽  
Vol 06 (01) ◽  
pp. 1350010 ◽  
Author(s):  
NAISEN YU ◽  
YING ZHAO ◽  
QING YUAN ◽  
YUNFENG WU ◽  
HAIYING DU ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Surface Defects ◽  
High Surface ◽  
Hydrothermal Process ◽  
High Surface Area ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Band Emission ◽  
Etched Silicon

ZnO nanoneedles were deposited on the chemically etched silicon nanowires via simple low temperature hydrothermal process in this paper. The morphology, structure and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Raman spectrum, respectively. The XRD pattern reveals a wurtzite structure for the ZnO nanoneedles. And SEM results show that the ZnO nanoneedles have a length of ∼ 400 nm with an average tip diameter of ∼ 5 nm and a base diameter of ∼ 50 nm. Meanwhile, the PL results show that the nanoneedles have wide band emission. Furthermore, the Raman results confirmed that the ultrafine nanoneedles have high surface area and surface defects. The wide band emission of ZnO nanoneedles suggests that it might serve as a potential host for white-light-emitting materials.

Application of Wide Band Gap Semiconductors to Increase Photocurrent in a Protein Based Photovoltaic Device

2012 ◽  
Vol 1414 ◽  
Author(s):  
Arash Takshi ◽  
Houman Yaghoubi ◽  
Daniel Jun ◽  
Rafael Saer ◽  
Ali Mahmoudzadeh ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Indium Tin Oxide ◽  
Wide Band ◽  
Photocurrent Density ◽  
Wide Bandgap ◽  
Semiconducting Materials ◽  
Wide Band Gap ◽  
Electron Hole ◽  
New Approach ◽  
Wide Band Gap Semiconductors

ABSTRACTReaction centers (RCs) from natural photosynthetic cells are photoactive proteins, which generate electron-hole pairs in presence of light. In a new approach presented in this work, a solution of suspended RCs with mediators has been applied as the electrolyte to build electrochemical based photovoltaic (PV) devices. In this approach, the mediators transfer charges from the RCs to the electrodes (indirect charge transfer). Various metallic and wide bandgap semiconducting materials, including Carbon, Au, Indium Tin Oxide (ITO), SnO2, WO3, have been tested as the electrodes. Among all WO3, which is a semiconductor, have shown the largest photocurrent density with an amount of ∼5.1 μA/cm2. The results show that the material of the electrode can affect the rates of the reactions in the cell. Choosing an appropriate material for the electrode, the charge transfer from the mediators to the electrode would be rectified to achieve a large photocurrent.

scholarly journals Luminescence and Morphological Kinetics of Functionalized ZnS Colloidal Nanocrystals

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Prabha Sana ◽  
Lubna Hashmi ◽  
M. M. Malik
Keyword(s):  
Semiconductor Nanocrystals ◽  
Wide Band ◽  
Host Lattice ◽  
Zinc Sulphide ◽  
Colloidal Nanocrystals ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Versus Plot ◽  
Band Emission ◽  
Different Temperatures

This paper reports functionalized zinc sulphide (ZnS) semiconductor nanocrystals (quantum dots, approx., 2.5 nm) which are an important building block in self-assembled nanostructures. ZnS is functionalized by organic stabilizer Thio glycolic acid (TGA). The samples have been synthesized by colloidal technique at relatively low temperature (below 100°C) at an atmospheric pressure of 10−3 torr. Manganese (Mn) doping ions have been incorporated (doped) in ZnS host lattice and observed its effect on growth morphology and optical properties of ZnS colloidal nanocrystals. By XRD, SEM, TEM, and PL, the obtained cubic phase nanosized TGA-capped ZnS materials were characterized. The morphology of ZnS obtained at different temperatures are analyzed by SEM. The crystallite size of the ZnS nanoparticles was estimated from the X-ray diffraction pattern by using Scherrer’s formula (approximately 2.5 nm) which is confirmed by TEM. The estimated bandgap value of ZnS NC’s by ()2 versus plot was 4.89 eV. Gaussian fitting curve in photoluminescence (PL) spectra indicated room temperature emission wavelength range from 300 to 500 nm in undoped and Mn-doped ZnS, with different emission peak intensities, and suggested the wide band emission colours in visible and near UV region which has wider applications in optical devices.

Sign in / Sign up

Export Citation Format

Share Document