Adaptive Kalman filtering based internal temperature estimation with an equivalent electrical network thermal model for hard-cased batteries

2015 ◽  
Vol 293 ◽  
pp. 351-365 ◽  
Author(s):  
Haifeng Dai ◽  
Letao Zhu ◽  
Jiangong Zhu ◽  
Xuezhe Wei ◽  
Zechang Sun
Keyword(s):  
Kalman Filtering ◽  
Thermal Model ◽  
Electrical Network ◽  
Internal Temperature ◽  
Temperature Estimation

scholarly journals Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki
Keyword(s):  
Thermal Properties ◽  
Measurement Error ◽  
Thermal Model ◽  
Bipolar Transistor ◽  
Internal Temperature ◽  
Self Heating ◽  
Factors Influencing ◽  
Proposed Model ◽  
The Common ◽  
Transient Thermal

This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.

A thermal model of the sailback pelycosaur

Paleobiology ◽  
1986 ◽  
Vol 12 (4) ◽  
pp. 450-458 ◽  
Author(s):  
Steven C. Haack
Keyword(s):  
Thermal Model ◽  
Energy Exchange ◽  
Thermal Inertia ◽  
Significant Problem ◽  
Internal Temperature ◽  
Warm Up ◽  
Excess Heat ◽  
Thermal Regimes ◽  
High Thermal Inertia ◽  
Standard Techniques

Standard techniques of energy exchange analysis are applied to modelling the thermal regimes of several species of sailback pelycosaurs. Of particular interest is the role played by the sail in thermoregulation. Although the sail did increase the rate at which the model could warm up in the morning, its effectiveness fell short of previous estimates. The sail increased the daytime internal temperature by typically 3°C to 6°C. The more massive subjects had the highest temperature increases owing partly to their higher thermal inertia and partly to their disproportionately large sails. The sail had no impact upon the nocturnal minimums in temperature.Overheating does not appear to have been a significant problem in the Permian environment, particularly in view of the high thermal inertia of the subjects modeled. When overheating occurred, the sail was of limited value for dumping excess heat.

scholarly journals Modelling thermal properties of large LED modules

2019 ◽  
Vol 37 (4) ◽  
pp. 628-638 ◽  
Author(s):  
Przemysław Ptak ◽  
Krzysztof Górecki ◽  
Barbara Dziurdzia
Keyword(s):  
Thermal Properties ◽  
Temperature Distribution ◽  
Power Dissipation ◽  
Thermal Model ◽  
Parameters Estimation ◽  
Internal Temperature ◽  
Practical Usefulness ◽  
Good Agreement

AbstractIn this paper a problem of modelling thermal properties of large LED modules is considered. The compact thermal model of such modules is proposed. The form of this model is presented and a method of parameters estimation is described. The practical usefulness of this model is verified experimentally by comparing the results of calculations and measurements of internal temperature of selected LEDs included in LED modules. The modules were fabricated by Fideltronic, Poland and measurements of temperature distribution on the surface of the modules at selected variants of power dissipation were performed at the Gdynia Maritime University. Good agreement between the results of measurements and modelling was obtained.

scholarly journals A Simulation Framework for Passive Acoustic Thermometry of Nonhomogeneous Materials

2020 ◽  
Author(s):  
Hossein Amiri ◽  
Ali Khani ◽  
Yousef Moghimi Boldaji ◽  
Bahador Makkiabadi
Keyword(s):  
Acoustic Radiation ◽  
Experimental Studies ◽  
Average Error ◽  
Internal Temperature ◽  
Simulation Framework ◽  
Temperature Estimation ◽  
Acoustic Thermometry ◽  
Different Temperatures ◽  
Passive Acoustic ◽  
Nonhomogeneous Materials

Purpose: Internal temperature is a significant factor for medical diagnosis. There are several thermometric methods, including IR, MRI, and active ultrasonic thermometry, which have limitations for clinical applications. The new method in this field called Passive Acoustic Thermometry (PAT), which enhanced some of this limitation. PAT is a safe method for internal temperature estimation that works based on acoustic radiation of materials with a specific temperature. Several experimental studies have been carried out so far in the field of PAT. While, to the best of our knowledge, there is no simulation-based research for nonhomogeneous materials reported yet. In this article (for the first time) we proposed a simulation framework for evaluating the PAT methodologies in nonhomogeneous materials; also we proposed a new formulation for temperature estimation in PAT algorithm. Materials and Methods: This framework supports the generation of acoustic radiation, signal processing, parameter estimation, and temperature reconstruction processes. At the moment the proposed framework estimates the temperature in the frequency domain and uses the frequency spectrum of the acquired ultrasound signals captured by a single transducer. Using the proposed framework, we tried to implement the previously practical experiments and the results of the simulation are consistent with those of the practical experiments. Also, we proposed the formulation that improves the error of temperature estimation.   Results: We study 6 scenarios, including 2 environments with a target at 3 different temperatures. The average error of the proposed formulation in two different nonhomogeneous materials for three different temperatures is less than 0.25°C. Conclusion: The results show that the proposed formulation is the best estimation in the formula that has been introduced until now and compare with the previous study the accuracy is enhanced 54% (from 0.79 to 0.36 deg.). Therefore, the proposed formula enhanced PAT accuracy for temperature estimation. Also, the results show that it is possible to use this framework to evaluate the PAT in different scenarios. Therefore, this method enhances the possibility of examination of different conditions and algorithms. It also reduces the cost of practical experiment.

Thermal Coupling in AlGaN/GaN Power Transistors

Frequenz ◽  
2013 ◽  
Vol 67 (1-2) ◽  
Author(s):  
Frank Schnieder ◽  
Matthias Rudolph
Keyword(s):  
Thermal Model ◽  
Fem Analysis ◽  
Finite Element Method Simulation ◽  
Electrical Network ◽  
Thermal Coupling ◽  
Power Transistor ◽  
Coupling Matrix ◽  
Power Transistors ◽  
The Matrix ◽  
Transistor Model

AbstractThermal coupling in AlGaN/GaN transistors is investigated by means of thermal FEM (finite element method) simulation. The results are combined with electrical network simulation using an electro-thermal model. From the FEM analysis the thermal coupling matrix is established, describing the thermal interaction between the different cells of a power transistor. The matrix allows to extract an equivalent circuit for the thermal coupling in a straightforward way. The electrical transistor model is complemented by thermal ports to connect the cells via the thermal coupling network. The electro-thermal model developed yields information on the distribution of temperature and currents within a powerbar and thus is an important tool in transistor design.

Sign in / Sign up

Export Citation Format

Share Document