Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures

2021 ◽  
Author(s):  
Şükrü Karataş ◽  
Kadir Ejderha ◽  
Ö. Faruk Bakkaloğlu ◽  
Hasan Efeoğlu ◽  
A.Mecit Türüt
Keyword(s):  
Temperature Dependence ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Density Distributions

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

2006 ◽  
Vol 27 (5) ◽  
pp. 405-408 ◽  
Author(s):  
K. Martens ◽  
Brice De Jaeger ◽  
R. Bonzom ◽  
J. Van Steenbergen ◽  
M. Meuris ◽  
...  
Keyword(s):  
Extraction Method ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
High Density ◽  
Density Distributions

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

scholarly journals Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  
Keyword(s):  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Process Temperature ◽  
Pure Nitrogen ◽  
Interface Property ◽  
Plasma Nitridation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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