The influence of pH value and annealing temperature on the characteristics of ZnO–Ru composite films and their application in thin film transistors

2016 ◽  
Vol 149 ◽  
pp. 1-4 ◽  
Author(s):  
Jiann-Shing Jeng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Ph Value ◽  
Composite Films ◽  
Influence Of Ph

Influence of pH Value on the Performance of Composite Films Prepared from Chromium Residue by Hydrothermal Method

2013 ◽  
Vol 28 (4) ◽  
pp. 387-392
Author(s):  
Tong SUN ◽  
Lian-Li LIU ◽  
Shu-Ying XU ◽  
Xiao-Lin PENG ◽  
Hai-Long YANG
Keyword(s):  
Hydrothermal Method ◽  
Ph Value ◽  
Composite Films ◽  
Influence Of Ph

HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

2015 ◽  
Vol 1731 ◽  
Author(s):  
Chih-Hung Li ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Low Cost ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Large Area ◽  
Apparent Decrease

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Tin Oxide

scholarly journals Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

RSC Advances ◽  
2018 ◽  
Vol 8 (61) ◽  
pp. 34817-34822 ◽  
Author(s):  
Wei Zhong ◽  
Guoyuan Li ◽  
Linfeng Lan ◽  
Bin Li ◽  
Rongsheng Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Channel Layer ◽  
Bottom Gate

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

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