Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination

We show that it is possible to obtain information relating to deep level interface traps, or so called ‘slow states’, by using the photo-CV characterisation method. Sub-bandgap illumination has been chosen in order to avoid band-to-band excitation for the creation of minority carriers. This enables information to be extracted from trapping states at the SiO2/SiC interface that are energetically deep within the band gap. Empirical observations of deep level trapping states with life times in the order of tens of hours are reported and the interface trap density as a function of energy has been extracted using the Terman method. Characterisation of these interface states will aid the development of new fabrication processes, with the aim of reducing the interface trap density to the same level as that of the SiO2/Si interface and facilitating the production of higher quality SiC based devices.

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The Electrical Characteristics of a Pd/AlN/Si Thin Film Hydrogen Gas Sensor

MRS Proceedings ◽

10.1557/proc-801-bb6.3 ◽

2003 ◽

Vol 801 ◽

Author(s):

Erik F. McCullen ◽

Haripriya E. Prakasam ◽

Wenjun Mo ◽

Jagdish Thakur ◽

Ratna Naik ◽

...

Keyword(s):

Thin Film ◽

Surface States ◽

Hydrogen Gas ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Interface Traps ◽

Electrical Characteristics ◽

Film Sensor ◽

Si Thin Film

ABSTRACTWe have extended our previous investigation of the electrical characteristics of a Pd/AlN/Si thin film sensor for varying thicknesses of AlN, from 300–2000Å. The capacitance vs. voltage, C(V), and conductance vs. voltage, G(V), measurements were utilized to investigate the presence of surface states within the Si gap at the AlN/Si interface. Our previous experiments on 500Å AlN did show the presence of interface traps, with an estimated surface density between 8×1014 and 1.5×1015 m−2eV−1 [1]. In our present work we've examined the effect of AlN thickness on the density of these interface traps. The density is dependent on AlN thickness. The thinner devices, 300Å, showed an interface trap density of 20–30×1015 m−2eV−1. The interface trap density decreased with increasing thickness up to 500Å, where the density remained relatively constant at about 1–5×1015 m−2eV−1 for thicknesses up to 2000Å. We have also shown that the interface trap density is independent of annealing.

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Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.457 ◽

2012 ◽

Vol 717-720 ◽

pp. 457-460 ◽

Cited By ~ 3

Author(s):

Shahrzad Salemi ◽

Akin Akturk ◽

Siddharth Potbhare ◽

Aivars J. Lelis ◽

Neil Goldsman

Keyword(s):

Density Functional Theory ◽

Density Of States ◽

Density Functional ◽

Energy Levels ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Interface Traps ◽

Functional Theory ◽

Before And After

We compare the effect of hydrogen, nitrogen, and phosphorous passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO2 structure. The results show that nitrogen and phosphorous passivation decrease total near interface trap density by pushing the energy levels of interface traps away from the conduction band. The density of states (DOS), including interface states (Dit), are calculated for several 4H(0001)-SiC/SiO2 structures using density functional theory (DFT).

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Determination of insulator/semiconductor interface trap density by correlation deep level transient spectroscopy method

Journal of Applied Physics ◽

10.1063/1.352219 ◽

1992 ◽

Vol 72 (9) ◽

pp. 4125-4129 ◽

Cited By ~ 4

Author(s):

Xin Li ◽

T. L. Tansley

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Trap Density ◽

Spectroscopy Method ◽

Interface Trap Density ◽

Interface Trap ◽

Semiconductor Interface ◽

Transient Spectroscopy

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WITHDRAWN: DC bias dependence of local deep level transient spectroscopy spectrum and quantitative two-dimensional imaging of SiO2/SiC interface trap density

Microelectronics Reliability ◽

10.1016/j.microrel.2017.06.008 ◽

2017 ◽

Author(s):

N. Chinone ◽

R. Kosugi ◽

S. Harada ◽

Y. Tanaka ◽

H. Okumura ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Two Dimensional ◽

Dc Bias ◽

Transient Spectroscopy

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Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.502 ◽

2018 ◽

Vol 924 ◽

pp. 502-505 ◽

Cited By ~ 1

Author(s):

Yong Ju Zheng ◽

Tamara Isaacs-Smith ◽

Ayayi Claude Ahyi ◽

S. Dhar

Keyword(s):

Borosilicate Glass ◽

Field Effect ◽

Gate Dielectric ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Interface Traps ◽

Field Effect Mobility ◽

Channel Mobility

In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as significant improvement of channel field-effect mobility on devices with BSG than that on devices with standard NO anneal. In addition, the results indicate interface trap density decreases with increasing B concentration at the interface of BSG/4H-SiC, which in turn, results in higher channel mobility.

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