Enhancing thermoelectric properties of p-type SiGe alloy through optimization of carrier concentration and processing parameters

2018 ◽  
Vol 88 ◽  
pp. 239-249 ◽  
Author(s):  
Suphagrid Wongprakarn ◽  
Supree Pinitsoontorn ◽  
Sora-at Tanusilp ◽  
Ken Kurosaki
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Processing Parameters ◽  
Sige Alloy ◽  
P Type

Synthesis and High Temperature Thermoelectric Properties of Alkaline-Earth Metal Hexaborides MB6 (M=Ca, Sr, Ba)

2003 ◽  
Vol 793 ◽  
Author(s):  
Masatoshi Takeda ◽  
Yosuke Kurita ◽  
Keisuke Yokoyama ◽  
Takahiro Miura ◽  
Tsuneo Suzuki ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Alkaline Earth ◽  
Earth Metal ◽  
Thermoelectric Device ◽  
Alloying Effect ◽  
P Type

ABSTRACTPolycrystalline alkaline-earth hexaborides (MB6: M =Ca, Sr, Ba) were synthesized and their thermoelectric and transport properties were examined to discuss their possibility as high temperature thermoelectric materials. Hall measurements showed that carrier concentration of the BaB6 was the highest among the three hexaborides and that of CaB6 was the lowest. Substitution of part of the alkaline earth metals with one of the others changed the carrier concentration of the hexaboride. As the carrier concentration increased, Seebeck coefficient increased and electrical conductivity decreased. These results suggest that the thermoelectric properties of the divalent hexaborides depend largely on the carrier concentration, and optimum carrier concentration which gives maximum power factor was estimated to be approximately 2x1026 m−3. Consequently, such a substitution enables us to control Seebeck coefficient and electrical conductivity of the hexaborides, and will also be effective to reduce the lattice heat conduction due to the alloying effect. A thermoelectric device was fabricated using SrB6 and boron carbide thin films as n-type and p-type elements, respectively. To the best of our knowledge, this is the first demonstration of a thermoelectric device composed of only boron-rich solids.

Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

2015 ◽  
Vol 44 (3) ◽  
pp. 1046-1051 ◽  
Author(s):  
Songting Cai ◽  
Zihang Liu ◽  
Jianyong Sun ◽  
Rui Li ◽  
Weidong Fei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Power Factor ◽  
Stacking Faults ◽  
Na Doping ◽  
P Type

Na substituting Sb in the AgSbSe2 not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.

scholarly journals High temperature thermoelectric properties of Zn-doped Eu5In2Sb6

2015 ◽  
Vol 3 (40) ◽  
pp. 10518-10524 ◽  
Author(s):  
Sevan Chanakian ◽  
Umut Aydemir ◽  
Alex Zevalkink ◽  
Zachary M. Gibbs ◽  
Jean-Pierre Fleurial ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Zintl Phase ◽  
P Type

The Zintl phase Eu5In2−xZnxSb6 (x = 0, 0.025, 0.05, 0.1, 0.2) with optimized p-type carrier concentration displays a zT of up to 0.4 at ∼660 K.

Lattice Deformation-Induced Enhancement in Thermoelectric Properties of p-Type Bismuth Telluride-Based Alloys

2021 ◽  
Vol 13 (7) ◽  
pp. 1358-1363
Author(s):  
Min Soo Park ◽  
Gook-Hyun Ha ◽  
Yong Ho Park ◽  
Hye Young Koo
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Thermoelectric Device ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Thermal And Electrical Properties ◽  
P Type ◽  
Short Time ◽  
Sintering Method

ABSTRACTThe properties of a thermoelectric device depend on the thermoelectric material. Bi-Te-based thermoelectric materials consist of p-type and n-type semiconductors are characterized by an excellent dimensionless figure of merit (ZT). In this study, we investigated the effect of the Bi/Sb compositional ratio on the thermoelectric properties in p-type Bi–Sb–Te alloys. Bi–Sb–Te powders were prepared by melting-grinding process. The sintered bodies were fabricated by the spark plasma sintering method, which allows short time sintering for controlling the growth of particles. By controlling the Bi/Sb ratio, the carrier concentration could be optimized. An increase in the Bi concentration led to a decrease in the carrier concentration and thermal conductivity, whereas the See-beck coefficient and specific resistance were increased due to phonon scattering. The thermoelectric ZT value was found to be dependent on changes in the thermal and electrical properties. The best carrier concentration value (2.46 x 1019/cm2) and the highest ZT value (1.3) were achieved for x = 0.4 in BixSb2−xTe3.

Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

2020 ◽  
Vol 528 ◽  
pp. 151856 ◽  
Author(s):  
Yixiao Li ◽  
Jing Li ◽  
Jinfeng Du ◽  
Jun Han ◽  
Qingpei Xiang ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Fast Neutron ◽  
Thermoelectric Properties ◽  
Sige Alloy ◽  
P Type

The effect of YSi2 nanoinclusion on the thermoelectric properties of p-type SiGe alloy

2017 ◽  
Vol 214 (10) ◽  
pp. 1700235 ◽  
Author(s):  
Suphagrid Wongprakarn ◽  
Supree Pinitsoontorn ◽  
Sora-at Tanusilp ◽  
Ken Kurosaki
Keyword(s):  
Thermoelectric Properties ◽  
Sige Alloy ◽  
P Type

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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