Effects of argon thermal annealing on surface structure, microstructural and silicide formation of Silicon-Titanium-Cobalt thin film

Author(s):  
Christopher Mtshali ◽  
Zakhelumuzi Khumalo ◽  
Gladness Mocumi ◽  
Keletso Lebesana ◽  
Ntombizonke Kheswa ◽  
...  
2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.


Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.


Friction ◽  
2021 ◽  
Author(s):  
Thi D. Ta ◽  
Hien D. Ta ◽  
Kiet A. Tieu ◽  
Bach H. Tran

AbstractThe rapid development of molecular dynamics (MD) simulations, as well as classical and reactive atomic potentials, has enabled tribologists to gain new insights into lubrication performance at the fundamental level. However, the impact of adopted potentials on the rheological properties and tribological performance of hydrocarbons has not been researched adequately. This extensive study analyzed the effects of surface structure, applied load, and force field (FF) on the thin film lubrication of hexadecane. The lubricant film became more solid-like as the applied load increased. In particular, with increasing applied load, there was an increase in the velocity slip, shear viscosity, and friction. The degree of ordering structure also changed with the applied load but rather insignificantly. It was also significantly dependent on the surface structure. The chosen FFs significantly influenced the lubrication performance, rheological properties, and molecular structure. The adaptive intermolecular reactive empirical bond order (AIREBO) potential resulted in more significant liquid-like behaviors, and the smallest velocity slip, degree of ordering structure, and shear stress were compared using the optimized potential for liquid simulations of united atoms (OPLS-UAs), condensed-phase optimized molecular potential for atomic simulation studies (COMPASS), and ReaxFF. Generally, classical potentials, such as OPLS-UA and COMPASS, exhibit more solid-like behavior than reactive potentials do. Furthermore, owing to the solid-like behavior, the lubricant temperatures obtained from OPLS-UA and COMPASS were much lower than those obtained from AIREBO and ReaxFF. The increase in shear stress, as well as the decrease in velocity slip with an increase in the surface potential parameter ζ, remained conserved for all chosen FFs, thus indicating that the proposed surface potential parameter ζ for the COMPASS FF can be verified for a wide range of atomic models.


2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.


2018 ◽  
Vol 448 ◽  
pp. 100-106 ◽  
Author(s):  
Jagrati Dwivedi ◽  
Mukul Gupta ◽  
VR Reddy ◽  
Ashutosh Mishra ◽  
V Srihari ◽  
...  

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.


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