Room temperature sputtered Cu doped NiO1+δ: p-type conductivity, stability of electrical properties and p-n heterojunction

2020 ◽  
Vol 835 ◽  
pp. 155269
Author(s):  
Kingsley O. Egbo ◽  
Mengqin Kong ◽  
Chao Ping Liu ◽  
Kin Man Yu
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Type Conductivity ◽  
P Type

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Electronic doping-enabled transition from n- to p-type conductivity over Au@CdS core–shell nanocrystals toward unassisted photoelectrochemical water splitting

2019 ◽  
Vol 7 (40) ◽  
pp. 23038-23045 ◽  
Author(s):  
Rongrong Pan ◽  
Jia Liu ◽  
Yuemei Li ◽  
Xinyuan Li ◽  
Erhuan Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cation Exchange ◽  
Water Splitting ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Type Conductivity ◽  
Hybrid Nanocrystals ◽  
Novel Strategy ◽  
Electronic Doping ◽  
P Type

Here we show a novel strategy for tailoring the synergistic electrical properties of metal@semiconductor hybrid nanocrystals (HNCs) based on cation exchange-enabled electronic doping.

scholarly journals Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

2014 ◽  
Vol 116 (16) ◽  
pp. 164109 ◽  
Author(s):  
Saif Ullah Awan ◽  
S. K. Hasanain ◽  
D. H. Anjum ◽  
M. S. Awan ◽  
Saqlain A. Shah
Keyword(s):  
Zno Nanoparticles ◽  
Room Temperature ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Ferroelectric Order

p-type in ZnO:N by codoping with Cr

2003 ◽  
Vol 786 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Kossut ◽  
R. Butkute ◽  
W. Dobrowolski ◽  
...  
Keyword(s):  
Time Scale ◽  
Room Temperature ◽  
Surface Passivation ◽  
Hole Concentration ◽  
Rf Sputtering ◽  
Zno Films ◽  
Type Conductivity ◽  
Chromium Doping ◽  
P Type ◽  
Over Time

ABSTRACTWe report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

2009 ◽  
Vol 615-617 ◽  
pp. 19-22 ◽  
Author(s):  
Katarzyna Racka ◽  
Emil Tymicki ◽  
Marcin Raczkiewicz ◽  
Krzysztof Grasza ◽  
Michal Kozubal ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Experimental Methods ◽  
Room Temperature Resistivity ◽  
P Type ◽  
Source Materials ◽  
Type Crystal ◽  
Temperature Resistivity

n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).

Sign in / Sign up

Export Citation Format

Share Document