New practical device structure for graphen-based electrochromic devices

Tungsten oxide-based materials have drawn huge attention for their versatile uses to construct various energy storage devices. Particularly, their electrochromic devices and optically-changing devices are intensively studied in terms of energy-saving. Furthermore, based on close connections in the forms of device structure and working mechanisms between these two main applications, bifunctional devices of tungsten oxide-based materials with energy storage and optical change came into our view, and when solar cells are integrated, multifunctional devices are accessible. In this article, we have reviewed the latest developments of tungsten oxide-based nanostructured materials in various kinds of applications, and our focus falls on their energy-related uses, especially supercapacitors, lithium ion batteries, electrochromic devices, and their bifunctional and multifunctional devices. Additionally, other applications such as photochromic devices, sensors, and photocatalysts of tungsten oxide-based materials have also been mentioned. We hope this article can shed light on the related applications of tungsten oxide-based materials and inspire new possibilities for further uses.

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Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118692 ◽

1985 ◽

Vol 43 ◽

pp. 364-365

Author(s):

K.M. Hones ◽

P. Sheldon ◽

B.G. Yacobi ◽

A. Mason

Keyword(s):

High Efficiency ◽

Lattice Mismatch ◽

Low Cost ◽

Growth Conditions ◽

Nonradiative Recombination ◽

Device Structure ◽

Si Substrates ◽

Transmission Electron ◽

Dislocation Densities ◽

Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

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Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149283 ◽

1993 ◽

Vol 51 ◽

pp. 690-691

Author(s):

W. T. Pike

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Thermal Emission ◽

Lattice Parameter ◽

Scanning Transmission Electron Microscope ◽

Emission Source ◽

Device Structure ◽

Transmission Electron ◽

Scanning Transmission ◽

Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

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Preparation, Electronic Structure and Optical Properties of the Electrochromic Thin Films

Nonlinear Analysis Modelling and Control ◽

10.15388/na.2004.9.4.15150 ◽

2004 ◽

Vol 9 (4) ◽

pp. 363-372 ◽

Cited By ~ 2

Author(s):

T. Lukaszewicz ◽

A. Ravinski ◽

I. Makoed

Keyword(s):

Electrochromic Device ◽

Orbital Method ◽

Optical Parameters ◽

Full Potential ◽

Electrochromic Devices ◽

Energy Bands ◽

Conducting Film ◽

Recombination Probability ◽

Transparent Conducting ◽

Smoluchowski Equations

A new multilayer electrochromic device has been constructed according to the following pattern: glass1/ITO/WO3/gel electrolyte/BP/ITO/glass2, where ITO is a transparent conducting film made of indium and tin oxide and with the surface resistance equal 8–10 Ω/cm2 . The electrochromic devices obtained in the research are characterized by great (considerable) transmittance variation between coloration and bleaching state (25–40% at applied voltage of 1.5 to 3 V), and also high coloration efficiency (above 100 cm2 /C). Selfconsistent energy bands, dielectric permittivity and optical parameters are calculated using a full-potential linear muffin-tin orbital method. The numerical solution of the Debye-Smoluchowski equations is developed for simulating recombination probability of Li+ ions in amorphous electrolyte.

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Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

10.31399/asm.cp.istfa2018p0224 ◽

2018 ◽

Author(s):

Sang Hoon Lee ◽

Jeff Blackwood ◽

Stacey Stone ◽

Michael Schmidt ◽

Mark Williamson ◽

...

Keyword(s):

Cross Section ◽

Focused Ion Beam ◽

Ion Beam ◽

Image Data ◽

Planar Surface ◽

Device Structure ◽

Cross Sectional ◽

Device Structures ◽

The Cross ◽

Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

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Identifying the Root Cause of Source-Drain Leakage Caused Soft Fail in Advanced Bulk FinFET Devices

10.31399/asm.cp.istfa2018p0383 ◽

2018 ◽

Author(s):

Liangshan Chen ◽

Yuting Wei ◽

Tanya Schaeffer ◽

Chongkhiam Oh

Keyword(s):

Careful Analysis ◽

Physical Analysis ◽

Device Structure ◽

Tem Analysis ◽

Root Cause ◽

3D Architecture ◽

Cause Of Failure ◽

Electrical Analysis ◽

Electrical Data

Abstract The paper reports the investigation on the root cause of source-drain leakage in bulk FinFET devices. While the failing device was readily isolated by nanoprobing technique and the electrical analysis pinpointed the potential defect location inside the Fin channel, the identification of physical root cause went through extreme challenges imposed by the tiny-sized device and the unique FinFET 3D architecture. The initial TEM analysis was misled by the projection of a species in the lamella surface and thus could not explain the electrical data. Careful analysis on the device structure was able to identify the origin of the species and led to the discovery of the actual root cause. This paper will provide the analysis details leading to the findings, and highlight the role of electrical understanding in not only providing guidance for physical analysis but also revealing the true root cause of failure in FinFET devices.

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TECHNICAL AND ECONOMIC EVALUATION OF THE DEVELOPMENT OF A DEVICE FOR THE PREVENTION OF APNEA DURING PHYSIOLOGICAL SLEEP IN HUMANS

СИСТЕМНЫЙ АНАЛИЗ И УПРАВЛЕНИЕ В БИОМЕДИЦИНСКИХ СИСТЕМАХ ◽

10.36622/vstu.2020.19.3.025 ◽

2020 ◽

pp. 198-210

Author(s):

Сергей Борисович Казаков ◽

Дмитрий Михайлович Шишов ◽

Антон Игоревич Ларин ◽

Александр Петрович Николаев ◽

Аза Валерьевна Писарева

Keyword(s):

Sleep Apnea ◽

Humidity Sensor ◽

Lung Ventilation ◽

High Price ◽

Device Structure ◽

Artificial Lung Ventilation ◽

Exact Moment ◽

The Cost ◽

Technical Solutions ◽

Physiological Sleep

В статье представлен обзор существующих технических решений в сфере мониторинга и предотвращения апноэ во сне. Произведён анализ существующих аппаратов для предотвращения апноэ, который показал, что на рынке присутствует большое количество импортных моделей, однако они имеют довольно высокую цену. Разработанный нами Российский аналог проектируемого аппарата, при схожих характеристиках, будет иметь более привлекательную цену, чем у импортных приборов. Интегрирование датчика влажности в персональную маску пациента даёт возможность отслеживать остановки дыхания пациента во время сна, и тем самым включать процесс принудительной подачи дыхательной смеси именно в тот момент, когда она необходима для устранения патологии. Целью научной работы является разработка конструкции прибора и создание алгоритма программы для управления аппарата искусственной вентиляции лёгких для предотвращения апноэ во сне. Показана разработка структуры устройства аппарата. Подобран компрессор и датчик влажности с обоснованными характеристиками для создания аппарата, а также основные элементы. Разработана конструкция корпуса аппарата и разработана компоновка. Выполнено технико-экономическое обоснование разработки аппаратно-программного комплекса для предотвращения апноэ во сне. Показано, что себестоимость готового изделия достаточно конкурентна The article presents an overview of existing technical solutions in the field of monitoring and prevention of sleep apnea. An analysis of existing devices for preventing apnea was made, which showed that there are a large number of imported models on the market, but they have a fairly high price. The Russian analog of the designed device developed by us, with similar characteristics, will have a more attractive price than that of imported devices. The integration of the humidity sensor into the patient's personal mask makes it possible to monitor the patient's breathing stops during sleep, and thus enable the process of forced delivery of the respiratory mixture at the exact moment when it is necessary to eliminate the pathology. The purpose of the research is to develop the device design and create a program algorithm for controlling the artificial lung ventilation device to prevent sleep apnea. The development of the device structure is shown. The compressor and humidity sensor with reasonable characteristics for creating the device, as well as the main elements are selected. The design of the device body and its layout were developed. A feasibility study for the development of a hardware and software system for preventing sleep apnea has been completed. It is shown that the cost of the finished product is quite competitive

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Síntesis sencilla de óxido de tungsteno(VI) a partir del filamento de un foco

Educación Química ◽

10.22201/fq.18708404e.2008.4.25865 ◽

2011 ◽

Vol 19 (4) ◽

pp. 341

Author(s):

Joel Díaz Reyes ◽

Aarón Pérez-Benítez ◽

Valentín Dorantes

Keyword(s):

Infrared Spectroscopy ◽

High Temperatures ◽

Power Supply ◽

Light Bulb ◽

Electrochromic Devices ◽

Tungsten Filament ◽

Tungsten Oxides ◽

Ac Power

<span>Tungsten(VI) oxide can be easily synthesized starting from a standard light bulb. The reaction consists in the oxidation at high temperatures (T ≈ 2000 3000° C) of a tungsten filament in presence of air; conditions which can be easily achieved by connecting a broken light bulb (but with its intact filament) to an AC-power supply of 110 volts. The vapor of WO3 is condensed into a beaker in a quantity enough to be characterized by infrared spectroscopy. The experiment is very funny, inexpensive and allows to the teacher to link several topics in current chemistry and physics of the tungsten oxides, such as their nomenclature and technological applications (i.e. electrochromic devices, gasochromic sensors, superalloys or as it is used in home: As a simple emisor of light!).</span>

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