High-speed organic single-crystal transistors gated with short-channel air gaps: Efficient hole and electron injection in organic semiconductor crystals

2013 ◽  
Vol 14 (6) ◽  
pp. 1656-1662 ◽  
Author(s):  
Mayumi Uno ◽  
Takafumi Uemura ◽  
Yusuke Kanaoka ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductor ◽  
High Speed ◽  
Electron Injection ◽  
Short Channel ◽  
Air Gaps ◽  
Semiconductor Crystals ◽  
Organic Single Crystal

Scaling effect on the operation stability of short-channel organic single-crystal transistors

2007 ◽  
Vol 91 (6) ◽  
pp. 063506 ◽  
Author(s):  
T. Minari ◽  
T. Miyadera ◽  
K. Tsukagoshi ◽  
T. Hamano ◽  
Y. Aoyagi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Short Channel ◽  
Scaling Effect ◽  
Organic Single Crystal ◽  
Operation Stability

Short-channel and high-mobility p- and n-type organic single-crystal transistors with air-gap structures

2012 ◽  
Vol 1402 ◽  
Author(s):  
M. Uno ◽  
T. Uemura ◽  
K. Miwa ◽  
A. Facchetti ◽  
J. Takeya
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Channel Length ◽  
Air Gap ◽  
Short Channel ◽  
Glass Substrates ◽  
Channel Lengths

ABSTRACTIn an effort to realize high-speed organic logic components, p- and n-type single-crystal organic field-effect transistors (SC-OFETs) were fabricated using air-gap structures with channel lengths as short as several μm. High carrier mobility of about 10 cm2/Vs is demonstrated in rubrene SC-OFETs even with the short channel length of 6 μm, using Si-based microstructures. The contact resistance is estimated to be 450 Ohm cm, which is only 5% of the total channel resistance between source and drain electrodes. Performances of n-type air-gap devices based on PDIF-CN2 are also demonstrated exhibiting electron transport with the carrier mobility of about 2 cm2/Vs. Furthermore, micron-scale air-gap structures are fabricated using insulating materials on glass substrates to reduce parasitic gate capacitance. The cut-off frequency of this rubrene air-gap device is measured to be as high as 8 MHz with applied drain voltage VD of 15 V. These techniques are promising to be applicable to next-generation organic high-speed logic circuits.

Alignment Control of Patterned Organic Semiconductor Crystals in Short-Channel Transistor Using Unidirectional Solvent Evaporation Process

2015 ◽  
Vol 62 (7) ◽  
pp. 2306-2312 ◽  
Author(s):  
Yoshihide Fujisaki ◽  
Daichi Takahashi ◽  
Yoshiki Nakajima ◽  
Mitsuru Nakata ◽  
Hiroshi Tsuji ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Solvent Evaporation ◽  
Evaporation Process ◽  
Short Channel ◽  
Semiconductor Crystals ◽  
Solvent Evaporation Process

Single-displacement controlled spontaneous electrolysis towards CuTCNQ microribbon electrodes in organic single-crystal transistors

2015 ◽  
Vol 17 (40) ◽  
pp. 26541-26544 ◽  
Author(s):  
Liangfu He ◽  
Zhuoyu Ji ◽  
Yonggang Zhen ◽  
Jie Liu ◽  
Fangxu Yang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductor ◽  
Solution Processed ◽  
Organic Single Crystal

CuTCNQ microribbons prepared by a controllable and solution-processed method give rise to interfacial energetic match with organic semiconductor.

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

2020 ◽  
Vol 30 (11) ◽  
pp. 1909501 ◽  
Author(s):  
Akifumi Yamamura ◽  
Takaaki Sakon ◽  
Kayo Takahira ◽  
Takahiro Wakimoto ◽  
Mari Sasaki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Frequency Band ◽  
High Frequency ◽  
High Speed ◽  
High Frequency Band ◽  
Very High Frequency ◽  
Organic Single Crystal ◽  
Very High

Short-Channel Solution-Processed Organic Semiconductor Transistors and their Application in High-Speed Organic Complementary Circuits and Organic Rectifiers

2015 ◽  
Vol 1 (12) ◽  
pp. 1500178 ◽  
Author(s):  
Mayumi Uno ◽  
Yusuke Kanaoka ◽  
Bu-Sang Cha ◽  
Nobuaki Isahaya ◽  
Masaki Sakai ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
High Speed ◽  
Short Channel ◽  
Solution Processed

scholarly journals High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative

2012 ◽  
Vol 101 (19) ◽  
pp. 193304 ◽  
Author(s):  
Dae Sung Chung ◽  
Tae Kyu An ◽  
Chan Eon Park ◽  
Hui-Jun Yun ◽  
Soon-Ki Kwon ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
Solution Processed ◽  
Anthracene Derivative ◽  
Organic Single Crystal

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal
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