Effects of semiconductor/dielectric interfacial properties on the electrical performance of top-gate organic transistors

2014 ◽  
Vol 15 (7) ◽  
pp. 1299-1305 ◽  
Author(s):  
Danbi Choi ◽  
Tae Kyu An ◽  
Yu Jin Kim ◽  
Dae Sung Chung ◽  
Se Hyun Kim ◽  
...  
Keyword(s):  
Interfacial Properties ◽  
Electrical Performance ◽  
Organic Transistors

Large Area Printing of Organic Transistors via a High Throughput Dry Process

2002 ◽  
Vol 736 ◽  
Author(s):  
Graciela B. Blanchet ◽  
Yueh-Lin Loo ◽  
J. A. Rogers ◽  
F. Gao ◽  
C. R. Fincher
Keyword(s):  
High Speed ◽  
Electrical Performance ◽  
Organic Transistors ◽  
Electronic Systems ◽  
Large Area ◽  
Additive Process ◽  
Organic Electronic ◽  
Dry Process ◽  
Thermal Transfer ◽  
Expected Benefits

Organic electronic systems offer the advantage of low weight and flexibility at potentially lower cost. Although the fabrication of functioning plastic transistors using approaches such as ink jet, lithography and stamping has been described i1–3, chemically compatible materials that allow for the sequential application of liquid layers is a technical barrier. Material issues maybe the Achilles heel of ultimately printing organic electronic devices as newspapers today, at high speeds and in a reel to reel process. We introduce a novel process–thermal transfer–a non-lithographic technique that enables printing multiple, successive layers via a dry additive process. This method is capable of patterning a range of organic materials at high speed over large areas with micron size resolution and excellent electrical performance. Such a dry, potentially reel-to-reel printing method may provide a practical route to realizing the expected benefits of plastics for electronics. We illustrate the viability of thermal transfer and the ability to develop suitable printable organics conductors by fabricating a functioning 4000 cm2 transistor array.

Printed Organic Transistors with Uniform Electrical Performance and Their Application to Amplifiers in Biosensors

2015 ◽  
Vol 1 (7) ◽  
pp. 1400052 ◽  
Author(s):  
Kenjiro Fukuda ◽  
Tsukuru Minamiki ◽  
Tsuyoshi Minami ◽  
Makoto Watanabe ◽  
Takashi Fukuda ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Organic Transistors

Dielectrics for Organic Transistors with Low Threshold Voltage

2005 ◽  
Vol 871 ◽  
Author(s):  
Jochen Brill ◽  
Silke Goettling ◽  
Eduardo Margallo Balbás
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
High K ◽  
Low Threshold

AbstractOrganic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.

Biosensors: Printed Organic Transistors with Uniform Electrical Performance and Their Application to Amplifiers in Biosensors (Adv. Electron. Mater. 7/2015)

2015 ◽  
Vol 1 (7) ◽  
Author(s):  
Kenjiro Fukuda ◽  
Tsukuru Minamiki ◽  
Tsuyoshi Minami ◽  
Makoto Watanabe ◽  
Takashi Fukuda ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Organic Transistors

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

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