Electronic structure engineering in silicene via atom substitution and a new two-dimensional Dirac structure Si 3 C

2018 ◽  
Vol 98 ◽  
pp. 39-44 ◽  
Author(s):  
Na Yin ◽  
Ying Dai ◽  
Wei Wei ◽  
Baibiao Huang
Keyword(s):  
Electronic Structure ◽  
Dirac Structure ◽  
Two Dimensional ◽  
Structure Engineering

scholarly journals Growth of vertical heterostructures based on orthorhombic SnSe/hexagonal In2Se3 for high-performance photodetectors

2019 ◽  
Vol 1 (7) ◽  
pp. 2606-2611 ◽  
Author(s):  
Xuan-Ze Li ◽  
Yi-Fan Wang ◽  
Jing Xia ◽  
Xiang-Min Meng
Keyword(s):  
Electronic Structure ◽  
High Performance ◽  
Layered Materials ◽  
Two Dimensional ◽  
Novel Device ◽  
2D Layered Materials ◽  
Device Applications ◽  
Structure Engineering

Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications.

scholarly journals Two-dimensional MoS 2 under ion irradiation: from controlled defect production to electronic structure engineering

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025078 ◽  
Author(s):  
Mahdi Ghorbani-Asl ◽  
Silvan Kretschmer ◽  
Douglas E Spearot ◽  
Arkady V Krasheninnikov
Keyword(s):  
Electronic Structure ◽  
Ion Irradiation ◽  
Two Dimensional ◽  
Defect Production ◽  
Structure Engineering

scholarly journals Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

2021 ◽  
Vol 7 (16) ◽  
pp. eabe8971
Author(s):  
Shouvik Chatterjee ◽  
Shoaib Khalid ◽  
Hadass S. Inbar ◽  
Aranya Goswami ◽  
Taozhi Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Band Structure ◽  
Quantum Confinement ◽  
Model System ◽  
General Strategy ◽  
Two Dimensional ◽  
A Charge ◽  
Structure Engineering

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska
Keyword(s):  
Electronic Structure ◽  
Indium Arsenide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

2021 ◽  
Vol 2 (19) ◽  
pp. 6267-6271 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
Resonance Level ◽  
Unusual Behavior ◽  
Level Increase ◽  
Structure Engineering

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C3N4/Li-adsorbed Cr2Ge2Te6 van der Waals heterostructures

2021 ◽  
Vol 23 (10) ◽  
pp. 6171-6181
Author(s):  
Yaoqi Gao ◽  
Baozeng Zhou ◽  
Xiaocha Wang
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Interlayer Distance ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Van Der Waals Heterostructures

It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.

Electronic structure engineering of single atomic Ru by Ru nanoparticles to enable enhanced activity for alkaline water reduction

2019 ◽  
Vol 7 (33) ◽  
pp. 19531-19538 ◽  
Author(s):  
Qi Hu ◽  
Guomin Li ◽  
Xiaowan Huang ◽  
Ziyu Wang ◽  
Hengpan Yang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Electronic Structures ◽  
Alkaline Water ◽  
Water Reduction ◽  
Ru Nanoparticles ◽  
Enhanced Activity ◽  
Structure Engineering

The electronic structures of single atomic Ru (SA-Ru) were suitably optimized by nearby Ru NPs for boosting the hydrogen evolution reaction (HER) over SA-Ru.

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